Datasheet SS32 - SS320 (Taiwan Semiconductor) - 4
| Manufacturer | Taiwan Semiconductor |
| Description | 3A, 100V Schottky Barrier Surface Mount Rectifier in DO-214AB (SMC) package |
| Pages / Page | 8 / 4 — SS32 – SS320. CHARACTERISTICS CURVES. Fig.1 Forward Current Derating … |
| File Format / Size | PDF / 552 Kb |
| Document Language | English |
SS32 – SS320. CHARACTERISTICS CURVES. Fig.1 Forward Current Derating Curve. Fig.2 Typical Junction Capacitance
Model Line for this Datasheet
Text Version of Document
SS32 – SS320
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance
4 1000 ) f=1.0MHz A( Vsig=50mVp-p T N E 3 ) F RR p( E CU NC RD 2 A A 100 SS32 - SS34 CIT A ORW P F CA 1 GE SS32-34 RA SS35 - SS320 SS35-36 E V SS39-310 A SS315-320 0 10 0 25 50 75 100 125 150 0.1 1 10 100 LEAD TEMPERATURE (°C) REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics
A) 100000 ) 10 μ A (
SS32-34
(
SS32-34
T =125°C NT J NT E E 10000 RR RR T =125°C J CU E D CU 1000 R T =100°C RS T =100°C A J J E V 1 ) T =25°C J A ORW ( RE 100 F OUS OUS T =-55°C J NE A 10 NE T A T N Pulse width 300μs A T =25°C N 1% duty cycle J T A T 1 0.1 INS INS 10 20 30 40 50 60 70 80 90 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V)
Fig.5 Typical Reverse Characteristics Fig.6 Typical Forward Characteristics
) A) 100000 A 10 μ ( (
SS35-36
T =150°C
SS35-36
J NT NT E E 10000 T =150°C RR J RR CU 1000 T =125°C J D CU T =125°C J E R A RS T =100°C J E ) V 100 1 T =100°C J A ORW ( F T =25°C J RE 10 OUS OUS NE T =-55°C NE J A A T 1 T N T =25°C N J Pulse width 300μs A A T T 1% duty cycle 0.1 INS 0.1 INS 10 20 30 40 50 60 70 80 90 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) 4 Version: Q2412
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance
4 1000 ) f=1.0MHz A( Vsig=50mVp-p T N E 3 ) F RR p( E CU NC RD 2 A A 100 SS32 - SS34 CIT A ORW P F CA 1 GE SS32-34 RA SS35 - SS320 SS35-36 E V SS39-310 A SS315-320 0 10 0 25 50 75 100 125 150 0.1 1 10 100 LEAD TEMPERATURE (°C) REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics
A) 100000 ) 10 μ A (
SS32-34
(
SS32-34
T =125°C NT J NT E E 10000 RR RR T =125°C J CU E D CU 1000 R T =100°C RS T =100°C A J J E V 1 ) T =25°C J A ORW ( RE 100 F OUS OUS T =-55°C J NE A 10 NE T A T N Pulse width 300μs A T =25°C N 1% duty cycle J T A T 1 0.1 INS INS 10 20 30 40 50 60 70 80 90 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V)
Fig.5 Typical Reverse Characteristics Fig.6 Typical Forward Characteristics
) A) 100000 A 10 μ ( (
SS35-36
T =150°C
SS35-36
J NT NT E E 10000 T =150°C RR J RR CU 1000 T =125°C J D CU T =125°C J E R A RS T =100°C J E ) V 100 1 T =100°C J A ORW ( F T =25°C J RE 10 OUS OUS NE T =-55°C NE J A A T 1 T N T =25°C N J Pulse width 300μs A A T T 1% duty cycle 0.1 INS 0.1 INS 10 20 30 40 50 60 70 80 90 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) 4 Version: Q2412