Datasheet Si2333DS (Vishay)
| Manufacturer | Vishay |
| Description | P-Channel 12-V (D-S) MOSFET in SOT-23 (TO-236) package |
| Pages / Page | 8 / 1 — Si2333DS. P-Channel 12-V (D-S) MOSFET. FEATURES. PRODUCT SUMMARY. … |
| File Format / Size | PDF / 160 Kb |
| Document Language | English |
Si2333DS. P-Channel 12-V (D-S) MOSFET. FEATURES. PRODUCT SUMMARY. Halogen-free According to IEC 61249-2-21. VDS (V). RDS(on) (
Model Line for this Datasheet
Text Version of Document
Si2333DS
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (
Ω
) ID (A) Available
0.032 at VGS = - 4.5 V - 5.3 • TrenchFET® Power MOSFET - 12 0.042 at VGS = - 2.5 V - 4.6 0.059 at V
APPLICATIONS
GS = - 1.8 V - 3.9 • Load Switch • PA Switch
TO-236
(SOT-23) G 1 3 D S 2 Top View Si2333DS (E3)* * Marking Code
Ordering Information:
Si2333DS-T1-E3 (Lead (Pb)-free) Si2333DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage VDS - 12 V Gate-Source Voltage VGS ± 8 TA = 25 °C - 5.3 - 4.1 Continuous Drain Current (T I J = 150 °C)a, b D TA = 70 °C - 4.2 - 3.3 A Pulsed Drain Current IDM - 20 Continuous Source Current (Diode Conduction)a, b IS - 1.0 - 0.6 TA = 25 °C 1.25 0.75 Maximum Power Dissipationa, b PD W TA = 70 °C 0.8 0.48 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit
t ≤ 5 s 75 100 Maximum Junction-to-Ambienta RthJA Steady State 120 166 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 72023 www.vishay.com S09-0130-Rev. C, 02-Feb-09 1
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (
Ω
) ID (A) Available
0.032 at VGS = - 4.5 V - 5.3 • TrenchFET® Power MOSFET - 12 0.042 at VGS = - 2.5 V - 4.6 0.059 at V
APPLICATIONS
GS = - 1.8 V - 3.9 • Load Switch • PA Switch
TO-236
(SOT-23) G 1 3 D S 2 Top View Si2333DS (E3)* * Marking Code
Ordering Information:
Si2333DS-T1-E3 (Lead (Pb)-free) Si2333DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage VDS - 12 V Gate-Source Voltage VGS ± 8 TA = 25 °C - 5.3 - 4.1 Continuous Drain Current (T I J = 150 °C)a, b D TA = 70 °C - 4.2 - 3.3 A Pulsed Drain Current IDM - 20 Continuous Source Current (Diode Conduction)a, b IS - 1.0 - 0.6 TA = 25 °C 1.25 0.75 Maximum Power Dissipationa, b PD W TA = 70 °C 0.8 0.48 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit
t ≤ 5 s 75 100 Maximum Junction-to-Ambienta RthJA Steady State 120 166 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 72023 www.vishay.com S09-0130-Rev. C, 02-Feb-09 1