Datasheet Si2333DS (Vishay) - 4
| Manufacturer | Vishay |
| Description | P-Channel 12-V (D-S) MOSFET in SOT-23 (TO-236) package |
| Pages / Page | 8 / 4 — Si2333DS. TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. … |
| File Format / Size | PDF / 160 Kb |
| Document Language | English |
Si2333DS. TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. On-Resistance vs. Gate-to-Source Voltage
Model Line for this Datasheet
Text Version of Document
Si2333DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 20 0.15 10 ) 0.12 Ω( TJ = 150 °C 0.09 ID = 5.3 A TJ = 25 °C esistance -R 1 ID = 2 A - On 0.06 - Source Current (A) on) I S DS(R 0.03 0.1 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 V V SD - Source-to-Drain Voltage (V) GS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
0.4 12 I 10 0.3 D = 140 µA 0.2 8 riance (V) a 0.1 6 er (W) V w o P GS(th) 0.0 4 V TA = 25 °C - 0.1 2 - 0.2 0 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 T Time (s) J - Temperature (°C)
Threshold Voltage Single Pulse Power
100 I DM Limited Limited by RDS(on)* P(t) = 0.0001 10 P(t) = 0.001 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 - Drain Current (A) I D T P(t) = 1 A = 25 °C 0.1 Single Pulse P(t) = 10 DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
www.vishay.com Document Number: 72023 4 S09-0130-Rev. C, 02-Feb-09
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 20 0.15 10 ) 0.12 Ω( TJ = 150 °C 0.09 ID = 5.3 A TJ = 25 °C esistance -R 1 ID = 2 A - On 0.06 - Source Current (A) on) I S DS(R 0.03 0.1 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 V V SD - Source-to-Drain Voltage (V) GS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
0.4 12 I 10 0.3 D = 140 µA 0.2 8 riance (V) a 0.1 6 er (W) V w o P GS(th) 0.0 4 V TA = 25 °C - 0.1 2 - 0.2 0 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 T Time (s) J - Temperature (°C)
Threshold Voltage Single Pulse Power
100 I DM Limited Limited by RDS(on)* P(t) = 0.0001 10 P(t) = 0.001 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 - Drain Current (A) I D T P(t) = 1 A = 25 °C 0.1 Single Pulse P(t) = 10 DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
www.vishay.com Document Number: 72023 4 S09-0130-Rev. C, 02-Feb-09