Datasheet Si2333DS (Vishay) - 3
| Manufacturer | Vishay |
| Description | P-Channel 12-V (D-S) MOSFET in SOT-23 (TO-236) package |
| Pages / Page | 8 / 3 — Si2333DS. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| File Format / Size | PDF / 160 Kb |
| Document Language | English |
Si2333DS. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics. On-Resistance vs. Drain Current. Capacitance
Model Line for this Datasheet
Text Version of Document
Si2333DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 20 20 VGS = 5 V thru 2.5 V TC = - 55 °C 2 V 25 °C 16 16 125 °C 12 12 ain Current (A) 8 1.5 V Dr 8 - I D - Drain Current (A) I D 4 4 1 V 0 0 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
0.15 1800 1500 0.12 ) Ω( 1200 Ciss 0.09 esistance -R 900 V 0.06 GS = 1.8 V - On ) VGS = 2.5 V 600 C - Capacitance (pF) Coss DS(onR 0.03 300 Crss VGS = 4.5 V 0.00 0 0 4 8 12 16 20 0 3 6 9 12 I V D - Drain Current (A) DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
5 1.4 VDS = 6 V VGS = 4.5 V I 1.3 4 D = 5.3 A ID = 5.3 A 1.2 3 1.1 On-Resistance 2 - 1.0 DS(on) - Gate-to-Source Voltage (V) R (Normalized) 1 GSV 0.9 0 0.8 0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
Document Number: 72023 www.vishay.com S09-0130-Rev. C, 02-Feb-09 3
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 20 20 VGS = 5 V thru 2.5 V TC = - 55 °C 2 V 25 °C 16 16 125 °C 12 12 ain Current (A) 8 1.5 V Dr 8 - I D - Drain Current (A) I D 4 4 1 V 0 0 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
0.15 1800 1500 0.12 ) Ω( 1200 Ciss 0.09 esistance -R 900 V 0.06 GS = 1.8 V - On ) VGS = 2.5 V 600 C - Capacitance (pF) Coss DS(onR 0.03 300 Crss VGS = 4.5 V 0.00 0 0 4 8 12 16 20 0 3 6 9 12 I V D - Drain Current (A) DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
5 1.4 VDS = 6 V VGS = 4.5 V I 1.3 4 D = 5.3 A ID = 5.3 A 1.2 3 1.1 On-Resistance 2 - 1.0 DS(on) - Gate-to-Source Voltage (V) R (Normalized) 1 GSV 0.9 0 0.8 0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
Document Number: 72023 www.vishay.com S09-0130-Rev. C, 02-Feb-09 3