Datasheet IRFR120, IRFU120, SiHFR120, SiHFU120 (Vishay)
| Manufacturer | Vishay |
| Description | Power MOSFET |
| Pages / Page | 13 / 1 — IRFR120, IRFU120, SiHFR120, SiHFU120. Power MOSFET. FEATURES. DPAK. IPAK. … |
| File Format / Size | PDF / 851 Kb |
| Document Language | English |
IRFR120, IRFU120, SiHFR120, SiHFU120. Power MOSFET. FEATURES. DPAK. IPAK. (TO-252). (TO-251). DESCRIPTION. PRODUCT SUMMARY
Model Line for this Datasheet
Text Version of Document
IRFR120, IRFU120, SiHFR120, SiHFU120
www.vishay.com Vishay Siliconix
Power MOSFET
D
FEATURES
• Dynamic dV/dt rating
DPAK IPAK
• Repetitive avalanche rated
(TO-252) (TO-251)
• Surface-mount (IRFR120, SiHFR120) D D • Straight lead (IRFU120, SiHFU120) G • Available in tape and reel Available • Fast switching S G D S • Ease of paralleling G S • Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
PRODUCT SUMMARY
designer with the best combination of fast switching, VDS (V) 100 ruggedized device design, low on-resistance and RDS(on) (Ω) VGS = 10 V 0.27 cost-effectiveness. Qg max. (nC) 16 The DPAK is designed for surface mounting using vapor Qgs (nC) 4.4 phase, infrared, or wave soldering techniques. The straight Q lead version (IRFU, SiHFU series) is for through-hole gd (nC) 7.7 mounting applications. Power dissipation levels up to 1.5 W Configuration Single are possible in typical surface mount applications.
ORDERING INFORMATION PACKAGE DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
SiHFR120-GE3 SiHFR120TR-GE3 a SiHFR120TRR-GE3 a SiHFR120TRL-GE3 a SiHFU120-GE3 Lead (Pb)-free and halogen-free IRFR120PbF-BE3 IRFR120TRPbF-BE3 IRFR120TRRPbF-BE3 IRFR120TRLPbF-BE3 b ab ab ab - Lead (Pb)-free IRFR120PbF IRFR120TRPbF a IRFR120TRRPbF a IRFR120TRLPbF a IRFU120PbF
Notes
a. See device orientation b. “-BE3” denotes alternate manufacturing location
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 100 V Gate-source voltage VGS ± 20 TC = 25 °C 7.7 Continuous drain current VGS at 10 V ID TC = 100 °C 4.9 A Pulsed drain current a IDM 31 Linear derating factor 0.33 W/°C Linear derating factor (PCB mount) e 0.020 Single pulse avalanche energy b EAS 210 mJ Repetitive avalanche Current a IAR 7.7 A Repetitive avalanche Energy a EAR 4.2 mJ Maximum power dissipation TC = 25 °C 42 PD W Maximum power dissipation (PCB mount)e TA = 25 °C 2.5 Peak diode recovery dV/dt c dV/dt 5.5 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) d for 10 s 260
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 5.3 mH, Rg = 25 Ω, IAS = 7.7 A (see fig. 12). c. ISD ≤ 9.2 A, dI/dt ≤ 110 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). S21-0466-Rev. D, 17-May-2021
1
Document Number: 91266 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Power MOSFET
D
FEATURES
• Dynamic dV/dt rating
DPAK IPAK
• Repetitive avalanche rated
(TO-252) (TO-251)
• Surface-mount (IRFR120, SiHFR120) D D • Straight lead (IRFU120, SiHFU120) G • Available in tape and reel Available • Fast switching S G D S • Ease of paralleling G S • Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
PRODUCT SUMMARY
designer with the best combination of fast switching, VDS (V) 100 ruggedized device design, low on-resistance and RDS(on) (Ω) VGS = 10 V 0.27 cost-effectiveness. Qg max. (nC) 16 The DPAK is designed for surface mounting using vapor Qgs (nC) 4.4 phase, infrared, or wave soldering techniques. The straight Q lead version (IRFU, SiHFU series) is for through-hole gd (nC) 7.7 mounting applications. Power dissipation levels up to 1.5 W Configuration Single are possible in typical surface mount applications.
ORDERING INFORMATION PACKAGE DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
SiHFR120-GE3 SiHFR120TR-GE3 a SiHFR120TRR-GE3 a SiHFR120TRL-GE3 a SiHFU120-GE3 Lead (Pb)-free and halogen-free IRFR120PbF-BE3 IRFR120TRPbF-BE3 IRFR120TRRPbF-BE3 IRFR120TRLPbF-BE3 b ab ab ab - Lead (Pb)-free IRFR120PbF IRFR120TRPbF a IRFR120TRRPbF a IRFR120TRLPbF a IRFU120PbF
Notes
a. See device orientation b. “-BE3” denotes alternate manufacturing location
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 100 V Gate-source voltage VGS ± 20 TC = 25 °C 7.7 Continuous drain current VGS at 10 V ID TC = 100 °C 4.9 A Pulsed drain current a IDM 31 Linear derating factor 0.33 W/°C Linear derating factor (PCB mount) e 0.020 Single pulse avalanche energy b EAS 210 mJ Repetitive avalanche Current a IAR 7.7 A Repetitive avalanche Energy a EAR 4.2 mJ Maximum power dissipation TC = 25 °C 42 PD W Maximum power dissipation (PCB mount)e TA = 25 °C 2.5 Peak diode recovery dV/dt c dV/dt 5.5 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) d for 10 s 260
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 5.3 mH, Rg = 25 Ω, IAS = 7.7 A (see fig. 12). c. ISD ≤ 9.2 A, dI/dt ≤ 110 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). S21-0466-Rev. D, 17-May-2021
1
Document Number: 91266 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000