HEXFET Power MOSFET Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C ...
HEXFET Power MOSFET Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C ...
HEXFET Power MOSFET Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C ...
Photovoltaic Isolator 5-10 Volt Output The PVI Photovoltaic Isolator generates an electri- cally isolated DC voltage upon receipt of a DC input signal. The input of the PVI is a light-emitting diode (LED) which is optically coupled to, but ...
HEXFET Power MOSFET Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized ...
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Advanced HEXFETÆ Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined ...
150V Single N-Channel StrongIRFET Power MOSFET in a DirectFET MZ package The StrongIRFET power MOSFET family is optimized for low R DS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ...
200 V high-side and low-side gate driver IC 200 V High and Low Side Driver IC with typical 1 A source and 1 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC.
100V Single N-Channel StrongIRFET Power MOSFET in a DirectFET SH package for Audio The StrongIRFET power MOSFET family is optimized for low R DS(on) and high current capability. The devices are ideal for low frequency applications requiring ...