Datasheets International Rectifier
Manufacturer: "International Rectifier"
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- HEXFET Power MOSFET Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized ...
- 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Advanced HEXFETÆ Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined ...
- -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET
- -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
- HEXFET Power MOSFET for DC-DC Converters
- HEXFET Power MOSFET for DC-DC Converters
- A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET SC package rated at 58 amperes optimized with low on resistance
- 150V Single N-Channel StrongIRFET Power MOSFET in a DirectFET MZ package The StrongIRFET power MOSFET family is optimized for low R DS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ...
- 200 V high-side and low-side gate driver IC 200 V High and Low Side Driver IC with typical 1 A source and 1 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC.
- 100V Single N-Channel StrongIRFET Power MOSFET in a DirectFET SH package for Audio The StrongIRFET power MOSFET family is optimized for low R DS(on) and high current capability. The devices are ideal for low frequency applications requiring ...
- 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
- Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
- Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
- HEXFET Power MOSFET
- 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
- Self-Oscillating Half Bridge
MOSFET, N, 100 V, 36 A, TO-220 Specifications: Continuous Drain Current Id: 30 A Current Id Max: 36 A Current Temperature: 25 C Drain Source Voltage Vds: 100 V Full Power Rating Temperature: 25 C Junction to Case Thermal Resistance A: 1.1 C/W Lead ...- HEXFET Power MOSFET, V DSS = 55 V, R DS(on) = 16.5 mΩ, I D = 30 A, TO-220AB
- HEXFET Power MOSFET, V DSS = 55 V, RDS (on) = 0.035 Ω, I D = 30 A, TO-220AB
- MOSFET, 55 V, 12 A, TO-220 Specifications: Continuous Drain Current Id: 12 A Current Id Max: -12 A Current Temperature: 25 C Drain Source Voltage Vds: 55 V Full Power Rating Temperature: 25 C Junction to Case Thermal Resistance A: 3.3 C/W Lead ...
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