N-Channel JFETs The 2N/SST5484 series consists of n-channel JFETs designed to provide high-performance amplification, especially at high frequencies up to and beyond 400 MHz.
N-Channel JFETs The 2N/SST5484 series consists of n-channel JFETs designed to provide high-performance amplification, especially at high frequencies up to and beyond 400 MHz.
N-Channel JFETs The 2N/SST5484 series consists of n-channel JFETs designed to provide high-performance amplification, especially at high frequencies up to and beyond 400 MHz.
High Precision Foil Resistor with TCR of 2.0 ppm/ C, Tolerance of 0.005 % and Load Life Stability of 0.005 % Bulk Metal Foil (BMF) technology outperforms all other resistor technologies available today for applications that require high precision ...
High Precision Foil Resistor with TCR of 2.0 ppm/ C, Tolerance of 0.005 % and Load Life Stability of 0.005 % Bulk Metal Foil (BMF) technology outperforms all other resistor technologies available today for applications that require high precision ...
High Precision Foil Resistor with TCR of 2.0 ppm/ C, Tolerance of 0.005 % and Load Life Stability of 0.005 % Bulk Metal Foil (BMF) technology outperforms all other resistor technologies available today for applications that require high precision ...
High Precision Foil Resistor with TCR of 2.0 ppm/ C, Tolerance of 0.005 % and Load Life Stability of 0.005 % Bulk Metal Foil (BMF) technology outperforms all other resistor technologies available today for applications that require high precision ...
High Precision Foil Resistor with TCR of 2.0 ppm/ C, Tolerance of 0.005 % and Load Life Stability of 0.005 % Bulk Metal Foil (BMF) technology outperforms all other resistor technologies available today for applications that require high precision ...
Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
Molded, SOT-23 Thin Film Resistor, Surface Mount Divider Network Vishay Dale Thin Film MPM Series Dividers provide 2 ppm/ C tracking and a ratio tolerance as tight as 0.01 %, small size, and exceptional stability for all surface mount applications. ...
A Small Package Proximity Sensor With a VCSEL, Low Idle Current, I 2C Interface, and Smart Dual Slave Address The VCNL36828P is a fully integrated proximity sensor. It combines a vertical-cavity surface-emitting laser (VCSEL), photodiode, and ...