650V Field Stop IGBT In TO247 The DGTD65T40S2PT is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high switching performance.
650V Field Stop IGBT The DGTD65T15H2TF is produced using advanced Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.
The F Series Protected IGBT combines a 1350 V, 20 A IGBT in RC-H5 technology with a unique protecting gate driver IC together in a TO-247 6-pin package for induction cooking applications.
Part Number: SKW07N120 Manufacturer: Infineon Description: IGBT, NPT, 1200 V, 16.5 A, 125 W, TO247 Download Data Sheet Docket: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode · Lower Eoff compared to ...
Part Number: SGW25N120 Manufacturer: Infineon Description: IGBT, NPT, 1200 V, 46 A, 313 W, TO247-3 Download Data Sheet Docket: SGW25N120 Fast IGBT in NPT-technology · 40% lower Eoff compared to previous generation · Short circuit withstand time ...
Part Number: SGP02N120 Manufacturer: Infineon Description: IGBT, NPT, 1200 V, 6.2 A, 62 W, TO220-3 Specifications: Collector Emitter Voltage V(br)ceo: 1.2 kV Collector Emitter Voltage Vces: 3.1 V DC Collector Current: 6.2 A Number of Pins: 3 ...