Datasheets - Gate Drivers - 3
Subsection: "Gate Drivers"
Manufacturers
Analog Devices Diodes Efficient Power Conversion GaNPower International Infineon International Rectifier IXYS Linear Technology Microchip Renesas STMicroelectronics Texas Instruments TRINAMICSearch results: 308 Output: 41-60
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650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode and shutdown in DSO-14 package
650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode and shutdown in DSO-8 package
- 650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-14 package
- 650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-8 package
- 650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-14 package
- 650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-8 package
- 650 V, 2.5 A high current high-side and low-side gate driver IC with integrated bootstrap diode in DSO-14 package
- 650 V, 2.5 A high current high-side and low-side gate driver IC with integrated bootstrap diode in DSO-8 package
- 650 V, 0.7 A half-bridge gate driver with integrated bootstrap diode and shutdown in DSO-14 package
- 650 V, 0.7 A half-bridge gate driver with integrated bootstrap diode and shutdown in DSO-8 package
- 650 V, 0.7 A half-bridge gate driver with integrated bootstrap diode and shutdown in DSO-8 package
- 650 V, 0.7 A half-bridge gate driver with integrated bootstrap diode in DSO-14 package
- 650 V, 0.7 A half-bridge gate driver with integrated bootstrap diode in DSO-8 package
- 650 V, 0.7 A high-side and low-side gate driver with integrated bootstrap diode in DSO-14 package
- 650 V, 0.7 A high-side and low-side gate driver with integrated bootstrap diode in DSO-8 package
- GaN Power IC in DFN5x6 Package These devices are power IC based on 650 V Power GaN HEMTs using proprietary (US patent pending) E-mode GaN on silicon technology. The gate driver is integrated with the main power transistor resulting in fast ...
- GaN Power IC in DFN5x6 Package These devices are power IC based on 650 V Power GaN HEMTs using proprietary (US patent pending) E-mode GaN on silicon technology. The gate driver is integrated with the main power transistor resulting in fast ...
- Isolated, Precision Half-Bridge Driver, 0.1 A Output
- Isolated, Precision Half-Bridge Driver, 0.1 A Output
- Isolated Half-Bridge Driver with Integrated High-Side Supply