9A Low Side SiC MOSFET IGBT Driver The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal ...
GaN Power IC in DFN5x6 Package These devices are power IC based on 650 V Power GaN HEMTs using proprietary (US patent pending) E-mode GaN on silicon technology. The gate driver is integrated with the main power transistor resulting in fast ...
GaN Power IC in DFN5x6 Package These devices are power IC based on 650 V Power GaN HEMTs using proprietary (US patent pending) E-mode GaN on silicon technology. The gate driver is integrated with the main power transistor resulting in fast ...