Datasheets - Schottky Diodes & Rectifiers - 5

Subsection: "Schottky Diodes & Rectifiers"
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  1. 30 mA, 30 V, Schottky Diode The Schottky diode is designed for high speed switching applications, circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. The miniature surface mount package is excellent for ...
  2. 30 mA, 30 V, Schottky Diode The Schottky diode is designed for high speed switching applications, circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. The miniature surface mount package is excellent for ...
  1. 30 mA, 30 V, Schottky Diode The Schottky diode is designed for high speed switching applications, circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. The miniature surface mount package is excellent for ...
  2. 30 mA, 30 V, Schottky Diode The Schottky diode is designed for high speed switching applications, circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. The miniature surface mount package is excellent for ...
  3. 30 V, 200 mA Axial General purpose Signal Schottky Diode General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharge
  4. 30 V, 200 mA Axial General purpose Signal Schottky Diode General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharge
  5. Schottky Power Rectifier, Surface Mount, 0.5 A, 20 V The Schottky Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop-reverse current tradeoff. It is ideally suited for low voltage, high ...
  6. Schottky barrier single diode Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
  7. 80 V, 500 mA General Purpose Signal Schottky Diode The TMBAT49 is a general purpose metal to silicon diode. This device has integrated protection against excessive voltage such as electrostatic discharges.
  8. 80 V, 500 mA General Purpose Signal Schottky Diode The TMBAT49 is a general purpose metal to silicon diode. This device has integrated protection against excessive voltage such as electrostatic discharges.
  9. Small Signal Schottky Diode
  10. Schottky Power Rectifier, Switch-mode, Dual, 20 A, 30 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and ...
  11. Schottky Power Rectifier, Switch-mode, Dual, 20 A, 30 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and ...
  12. Schottky Power Rectifier, Switch-mode, Dual, 20 A, 30 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and ...
  13. Schottky Barrier Rectifier, 40 V, 3.0 A The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide ...
  14. Schottky Barrier Rectifier, 40 V, 3.0 A The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide ...
  15. Schottky Barrier Rectifier, 40 V, 3.0 A The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide ...
  16. Schottky Barrier Rectifier, 40 V, 3.0 A The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide ...
  17. Schottky Barrier Rectifier, 40 V, 3.0 A The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide ...
  18. Schottky Power Rectifier, Surface Mount, 3.0 A, 30 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
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