Datasheet Nexperia PSMN1R0-40ULD

PSMN1R0-40ULD N-channel 40 V, 1.1 mО©, 280 A logic level MOSFET in
SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus technology
23 May 2018 Product data sheet 1. General description
SOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logic
level gate drive N-channel enhancement mode MOSFET in 150 В°C LFPAK56 package using
advanced TrenchMOS Superjunction technology. This product has been designed and qualified for
high performance power switching applications. 2. Features and benefits Improved creepage and clearance – meets the requirements of UL2595
280 A capability
Avalanche rated, 100% tested at IAS = 190 A
NextPower-S3 technology delivers 'superfast switching with soft recovery'
Low QRR, QG and QGD for high system efficiency and low EMI designs
Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage
Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology
High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to
150 В°C
Exposed leads can be wave soldered, visual solder joint inspection and high quality solder
joints
Low parasitic inductance and resistance 3. Applications Brushed and brushless motor control
Battery powered appliances where enhanced creepage and clearance is required to meet
UL2595
For non-UL2595 applications please use PSMN1R0-40YLD 4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 В°C ≤ Tj ≤ 150 В°C -40 V ID drain current VGS = 10 V; Tmb = 25 В°C; Fig. 2 -280 A Ptot total power dissipation Tmb = 25 В°C; Fig. 1 -164 W Tj junction temperature -55 -150 В°C VGS = 4.5 V; ID = 25 A; Tj = 25 В°C; …