Datasheets - MOSFET Single Transistors Nexperia

Subsection: "MOSFET Single Transistors"
Manufacturer: "Nexperia"
Search results: 16 Output: 1-16

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  1. Datasheet Nexperia PSMNR55-40SSHJ
    N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 500 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using ...
  2. Datasheet Nexperia BUK7S0R5-40HJ
    N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88 Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and ...
  3. Datasheet Nexperia PMN50XP,165
    P-channel TrenchMOS extremely low level FET
  4. Datasheet Nexperia BUK9V13-40HX
    Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) Dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed ...
  1. Datasheet Nexperia BUK7V4R2-40HX
    Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been ...
  2. Datasheet Nexperia PMV20ENR
    30 V, N-channel Trench MOSFET
  3. Datasheet Nexperia PHK12NQ03LT,518
    N-channel TrenchMOS logic level FET
  4. Datasheet Nexperia BSP122,115
    N-channel vertical D-MOS logic level FET
  5. Datasheet Nexperia GAN063-650WSAQ
    650 V, 50 mΩ Gallium Nitride (GaN) FET The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering ...
  6. Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications.
  7. Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications.
  8. Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's NextPower Live portfolio, the PSMN3R7-100BSE delivers very low R DSon and a very strong linear-mode (SOA) performance.
  9. SOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150В °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed ...
  10. SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique 'њSchottkyPlus'ќ technology delivers ...
  11. N-channel TrenchMOS logic level FET
  12. N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology

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