Datasheet Nexperia GAN063-650WSAQ

ManufacturerNexperia
SeriesGAN063-650WSA
Part NumberGAN063-650WSAQ
Datasheet Nexperia GAN063-650WSAQ

650 V, 50 mΩ Gallium Nitride (GaN) FET

Datasheets

Datasheet GAN063-650WSA
PDF, 289 Kb, Language: en, Revision: 27112019, File uploaded: Dec 5, 2019, Pages: 12
650 V, 50 mΩ Gallium Nitride (GaN) FET
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Detailed Description

The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET.

It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance. AEC-Q101 qualified.

Model Line

Series: GAN063-650WSA (1)
  • GAN063-650WSAQ

Other Names:

GAN063650WSAQ, GAN063 650WSAQ

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