SS32 – SS320 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.13 Typical Forward Power Dissipation vs.Fig.14 Typical Forward Power Dissipation vs.Forward CurrentForward Current 2.0 2.4 SS39-310 δ = 1 SS310-320 δ = 1 ) 2.0 1.6 W W ( N N 1.6 IO IO T 1.2 A δ = 0.5 T A δ = 0.5 IP IP S S 1.2 0.8 δ = 0.2 δ = 0.2 R DIS T =150°C R DIS T =150°C J 0.8 J δ = 0.1 δ = 0.1 OWE 0.4 OWE P P 0.4 0.0 0.0 0 1 2 3 0 1 2 3 FORWARD CURRENT (A) FORWARD CURRENT (A) Fig.15 Maximum Non-Repetitive Forward Surge Current 120 ) A 8.3ms single half sine wave ( 100 NT RE UR 80 C RGE U 60 SS32 - SS34 S RD A 40 ORW F K A 20 SS35 - SS320 E P 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig.16 Typical Transient Thermal Characteristics 100 ) C/W°( E NC DA 10 E P M I L A RM HE T 1 T N IE NS RA T 0. 1 0.01 0.1 1 10 100 PULSE DURATION (s) 6 Version: Q2412