Datasheet SS32 - SS320 (Taiwan Semiconductor) - 6

ManufacturerTaiwan Semiconductor
Description3A, 100V Schottky Barrier Surface Mount Rectifier in DO-214AB (SMC) package
Pages / Page8 / 6 — SS32 – SS320. CHARACTERISTICS CURVES. Fig.13 Typical Forward Power …
File Format / SizePDF / 552 Kb
Document LanguageEnglish

SS32 – SS320. CHARACTERISTICS CURVES. Fig.13 Typical Forward Power Dissipation vs

SS32 – SS320 CHARACTERISTICS CURVES Fig.13 Typical Forward Power Dissipation vs

Model Line for this Datasheet

Text Version of Document

SS32 – SS320
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.13 Typical Forward Power Dissipation vs. Fig.14 Typical Forward Power Dissipation vs. Forward Current Forward Current
2.0 2.4
SS39-310
δ = 1
SS310-320
δ = 1 ) 2.0 1.6 W W ( N N 1.6 IO IO T 1.2 A δ = 0.5 T A δ = 0.5 IP IP S S 1.2 0.8 δ = 0.2 δ = 0.2 R DIS T =150°C R DIS T =150°C J 0.8 J δ = 0.1 δ = 0.1 OWE 0.4 OWE P P 0.4 0.0 0.0 0 1 2 3 0 1 2 3 FORWARD CURRENT (A) FORWARD CURRENT (A)
Fig.15 Maximum Non-Repetitive Forward Surge Current
120 ) A 8.3ms single half sine wave ( 100 NT RE UR 80 C RGE U 60 SS32 - SS34 S RD A 40 ORW F K A 20 SS35 - SS320 E P 0 1 10 100 NUMBER OF CYCLES AT 60 Hz
Fig.16 Typical Transient Thermal Characteristics
100 ) C/W°( E NC DA 10 E P M I L A RM HE T 1 T N IE NS RA T 0. 1 0.01 0.1 1 10 100 PULSE DURATION (s) 6 Version: Q2412