TZX-Series www.vishay.com Vishay Semiconductors Axis Title 1.3 100 10000 V = V /V (25 °C) Ztn Zt Z T = 150 °C j 1.2 TK 10 VZ = 10 x 10-4/K 8 x 10-4/K T = 75 °C 6 x 10-4/K j 1000 1.1 1 4 x 10-4/K ) ine A ne ne 2 x 10-4/K (m 1.0 0 I F 1st li 2nd l 2nd li 0.1 - 2 x 10-4/K T = 25 °C j 100 0.9 - 4 x 10-4/K - Relative Voltage Change 0.01 ZtnV 0.8 - 60 0 60 120 180 240 0.001 10 0 0.2 0.4 0.6 0.8 1 95 9599 Tj - Junction Temperature (°C) V (V) F Fig. 3 - Typical Change of Working Voltage vs. Fig. 6 - Typical Forward Current IF vs. Forward Voltage VF Junction Temperature 15 100 80 10 P = 500 mW tot T = 25 °C /K) amb re Coefficient -4 60 u 5 (10 rrent (mA) Z u V 40 I = 5 mA Z of 0 - Z-C - Temperat I Z Z 20 V TK - 5 0 0 10 20 30 40 50 0 4 6 8 12 20 95 9600 V 95 9604 V Z - Z-Voltage (V) Z - Z-Voltage (V) Fig. 4 - Typical Temperature Coefficient of Vz vs. Z-Voltage Fig. 7 - Typical Z-Current vs. Z-Voltage 200 50 P = 500 mW 40 tot 150 T = 25 °C amb V = 2 V R 30 T = 25 °C j 100 rrent (mA) u 20 - Z-C 50 I Z - Diode Capacitance (pF) 10 DC 0 0 0 5 10 15 20 25 15 20 25 30 35 95 9601 VZ - Z-Voltage (V) 95 9607 VZ - Z-Voltage (V) Fig. 5 - Diode Capacitance vs. Z-Voltage Fig. 8 - Typical Z-Current vs. Z-Voltage Rev. 2.7, 04-Jun-2024 5 Document Number: 85614 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000