Datasheets Efficient Power Conversion

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1. EPC2361 — Datasheet Efficient Power Conversion
   MOSFET Single Transistors Efficient Power Conversion EPC2361
   

   EPC2361: 100 V, 101 A Enhancement-Mode GaN Power Transistor Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide ...
2. EPC2305 — Datasheet Efficient Power Conversion
   MOSFET Single Transistors Efficient Power Conversion EPC2305
   150 V, 329 A Enhancement Mode GaN Power Transistor

3. EPC2304 — Datasheet Efficient Power Conversion
   MOSFET Single Transistors Efficient Power Conversion EPC2304
   200 V, 260 A Enhancement Mode GaN Power Transistor
4. EPC23102 — Datasheet Efficient Power Conversion
   Motor / Motion / Ignition Controllers & Drivers Efficient Power Conversion EPC23102
   

   100 V, 35 A ePower Stage IC Integrated high side and low side eGaN FETs with internal gate driver and level shifter Power Stage Load Current (1 MHz), 35 A Maximum Input Voltage, 100 V
5. EPC2302 — Datasheet Efficient Power Conversion
   MOSFET Single Transistors Efficient Power Conversion EPC2302
   

   Enhancement Mode Power Transistor VDS, 100 V RDS(on), 1.8 mΩ ID, 101 A Pulsed ID, 408 A
6. EPC23101 — Datasheet Efficient Power Conversion
   Gate Drivers Efficient Power Conversion EPC23101
   

   100 V, 65 A ePower Chipset Pairs with EPC2302 to form a Power Stage up to 65 A Integrated Half Bridge Driver, Level Shift, Bootstrap, and High Side FET Power Stage Load Current (1 MHz), 65 A Maximum Input Voltage, 100 V
7. EPC21603 — Datasheet Efficient Power Conversion
   Laser Drivers Efficient Power Conversion EPC21603
   

   40 V, 10 A, LVDS Logic, eToF Laser Driver IC
8. EPC2059 — Datasheet Efficient Power Conversion
   MOSFET Single Transistors Efficient Power Conversion EPC2059
   170 V, 102 A Enhancement-Mode GaN Power Transistor
9. EPC2207 — Datasheet Efficient Power Conversion
   MOSFET Single Transistors Efficient Power Conversion EPC2207
   

   200 V, 54 A Enhancement-Mode GaN Power Transistor VDS, 200 V RDS(on), 22 mΩ ID, 14 A Pulsed ID, 54 A
10. EPC2215 — Datasheet Efficient Power Conversion
    MOSFET Single Transistors Efficient Power Conversion EPC2215
    

    200 V, 162 A Enhancement-Mode GaN Power Transistor VDS, 200 V RDS(on), 8 mΩ ID, 32 A Pulsed ID, 162 A
11. EPC2152ENGRT — Datasheet Efficient Power Conversion
    Gate Drivers Efficient Power Conversion EPC2152 EPC2152ENGRT
    

    80 V, 12.5 A ePower Stage Rated Output Current (1 MHZ)(1), 12.5 A Operating PWM Frequency Range(2), 3 MHz Operating Input Voltage Range, 60 V Bias Supply Voltage, 12 V Output Current and PWM Frequency Ratings are functions of Operating Conditions
12. EPC2051 — Datasheet Efficient Power Conversion
    MOSFET Single Transistors Efficient Power Conversion EPC2051
    

    100 V, 37 A Enhancement-Mode GaN Power Transistor
13. EPC2050 — Datasheet Efficient Power Conversion
    MOSFET Single Transistors Efficient Power Conversion EPC2050
    350 V, 26 A Enhancement-Mode GaN Power Transistor
14. EPC2115ENGRT — Datasheet Efficient Power Conversion
    Gate Drivers Efficient Power Conversion EPC2115 EPC2115ENGRT
    

    Dual 150 V, 5 A Integrated Gate Drivers eGaN IC
15. EPC2112ENGRT — Datasheet Efficient Power Conversion
    Gate Drivers Efficient Power Conversion EPC2112 EPC2112ENGRT
    

    200 V, 10 A Integrated Gate Driver eGaN IC
16. EPC EPC2103ENG — Datasheet Efficient Power Conversion -
    Gate Drivers Efficient Power Conversion EPC2103 EPC EPC2103ENG
    ­ 80 V Enhancement-Mode GaN Power Transistor Half Bridge
17. EPC2102ENG — Datasheet Efficient Power Conversion
    Gate Drivers Efficient Power Conversion EPC2102 EPC2102ENG
    60 V Enhancement-Mode GaN Power Transistor Half Bridge

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