Datasheets - Single FETs, MOSFETs STMicroelectronics
Subsection: "Single FETs, MOSFETs"
Manufacturer: "STMicroelectronics"
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BUZ171 BUZ71 IRF530 STB11NM60T4 STB19NF20 STB75NF75 STB9NK90Z STD12NE06 STD19NF20 STD30NF06 STD30NF06L STD30NF06LAG STD30NF06LT4 STD30PF03 STD4NK50Z STD4NK50Z-1 STD4NK50ZT4 STF19NF20 STF9NK90Z STFW4N150 STL200N45LF7 STL42P6LLF6 STP11NM60 STP19NF20 STP4N150 STP4NK50Z STP4NK50ZFP STP75NF75 STP75NF75FP STP9NK90Z STW4N150 STW88N65M5 STW88N65M5-4 STW9NK90Z STW9NK9SZ STWA88N65M5Search results: 727 Output: 1-20
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N-channel 900 V, 1.1 Ω, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH Power MOSFET- Single FETs, MOSFETs STMicroelectronics STF19NF20
Transistors, Transistor Arrays & Modules STMicroelectronics STF19NF20N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ...
- Single FETs, MOSFETs STMicroelectronics STD19NF20
Transistors, Transistor Arrays & Modules STMicroelectronics STD19NF20N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ... - Single FETs, MOSFETs STMicroelectronics STB19NF20
Transistors, Transistor Arrays & Modules STMicroelectronics STB19NF20N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ... - Single FETs, MOSFETs STMicroelectronics STP19NF20
Transistors, Transistor Arrays & Modules STMicroelectronics STP19NF20N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ... - N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET
- N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET
- N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET
- N-channel 500 V, 2.2 Ω typ., 3 A SuperMESH Power MOSFETs in IPAK and DPAK packages These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the ...
- N-channel 500 V, 2.2 Ω typ., 3 A SuperMESH Power MOSFETs in IPAK and DPAK packages These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the ...
- N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
- N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
- N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
- SIPMOS Power Transistor
- N-Channel 50V -0.085Ω -17A TO-220 STripFET Power MOSFET
- N-channel 45 V, 1.4 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package All features Among the lowest R DS(on) on the market Excellent FoM (figure of merit) Low C rss /C iss ratio for EMI immunity High avalanche ruggedness
- N-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a TO-220 package All features Extremely high dv/dt capability Gate charge minimized 100% avalanche tested
- N-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a TO-220FP package All features Extremely high dv/dt capability Gate charge minimized 100% avalanche tested
- N-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a D2PAK package All features Extremely high dv/dt capability Gate charge minimized 100% avalanche tested
- N-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a TO-247 package All features Extremely high dv/dt capability Gate charge minimized 100% avalanche tested
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