Datasheets - Single FETs, MOSFETs - 5

Subsection: "Single FETs, MOSFETs"
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  1. Datasheet Ampleon BLF881S,112
    UHF power LDMOS transistor A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device ...
  2. UHF power LDMOS transistor A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device ...
  1. Datasheet Ampleon BLF881,112
    UHF power LDMOS transistor A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device ...
  2. UHF power LDMOS transistor A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device ...
  3. 30V P-Channel MOSFET The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
  4. P-Channel 1.8V Specified PowerTrench MOSFET This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.
  5. Datasheet Diodes DMP3099L-7
    P-CHANNEL ENHANCEMENT MODE MOSFET This MOSFET has been designed to minimize the on-state resistance (R DS(ON) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
  6. Datasheet Diodes DMP3099L-13
    P-CHANNEL ENHANCEMENT MODE MOSFET This MOSFET has been designed to minimize the on-state resistance (R DS(ON) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
  7. P-CHANNEL ENHANCEMENT MODE MOSFET This MOSFET has been designed to minimize the on-state resistance (R DS(ON) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
  8. Power MOSFET 33 Amps, 100 Volts This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low ...
  9. Power MOSFET 20 Amps, 200 Volts This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low ...
  10. N- P-Channel Enhancement Mode Field Effect Transistor
  11. Power MOSFET 100V, 1.7Ω, 0.7A, Single P-Channel
  12. Power MOSFET 100V, 1.7Ω, 0.7A, Single P-Channel
  13. N-Channel MOSFET
  14. N-Channel MOSFET
  15. N-Channel MOSFET
  16. N-Channel MOSFET
  17. N-Channel MOSFET
  18. Field-Effect Transistor