Datasheets - Single FETs, MOSFETs - 5
Subsection: "Single FETs, MOSFETs"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse Magnachip MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba VBsemi Vishay Wayon Wolfspeed YoutaiSearch results: 7,012 Output: 81-100
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- Super Low Noise HEMT The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. This device is packaged in cost effective, low parasitic, hermetically ...
- Power MOSFET -30V -50A 25 mOhm Single P-Channel TO-220 Logic Level This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery ...
- HEXFET Power MOSFET
- Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
- Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
- Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
- Silicon P Channel MOSFET Not Recommended for New Designs
- Silicon P Channel MOSFET Not Recommended for New Designs
- Silicon P Channel MOSFET Not Recommended for New Designs
- N-channel TrenchMOS logic level FET Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and ...
- Single FETs, MOSFETs Vishay IRFZ24 IRFZ24PbF-BE3
Transistors, Transistor Arrays & Modules Vishay IRFZ24
Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. - Single FETs, MOSFETs Vishay SiHFU9310 SiHFU9310-GE3
Transistors, Transistor Arrays & Modules Vishay SiHFU9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - Single FETs, MOSFETs Vishay SiHFR9310 SiHFR9310-GE3
Transistors, Transistor Arrays & Modules Vishay SiHFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
- Single FETs, MOSFETs Vishay IRFR9310 IRFR9310TRPbF
Transistors, Transistor Arrays & Modules Vishay IRFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - Single P-Channel Logic Level PowerTrench MOSFET -30V, -11A, 14mΩ This P-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low ...
EPC2361: 100 V, 101 A Enhancement-Mode GaN Power Transistor Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide ...- N-Channel 30 V (D-S) MOSFET
P-channel Enhancement Mode Mosfet This MOSFET is designed to meet the stringent requirements of Automotive applications.- Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V