Datasheets - Single FETs, MOSFETs - 7

Subsection: "Single FETs, MOSFETs"
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  1. 150 V, 329 A Enhancement Mode GaN Power Transistor
  2. 200 V, 260 A Enhancement Mode GaN Power Transistor
  1. Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable ...
  2. Datasheet Central Semiconductor CDM22010-650
    10A,650V Through-Hole MOSFET N-Channel Enhancement Mode High Current
  3. Datasheet Central Semiconductor CDM22011-600LRFP SL
    11A,600V Through-Hole MOSFET N-Channel Enhancement Mode - UltraMOS
  4. N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...
  5. N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...
  6. N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...
  7. N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...
  8. N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...
  9. N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...
  10. N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...
  11. N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...
  12. N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...
  13. N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...
  14. HEXFET Power MOSFET Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized ...
  15. N-Channel UltraFET Power MOSFET 100V, 75A, 8mΩ
  16. TrenchP Power MOSFETs Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry ...
  17. TrenchP Power MOSFETs Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry ...
  18. TrenchP Power MOSFETs Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry ...