Datasheets - MOSFET Single Transistors - 5
Subsection: "MOSFET Single Transistors"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSearch results: 8,105 Output: 81-100
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P-Channel 30 V (D-S) MOSFET TrenchFET power MOSFET- N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
- N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
- N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
- N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...- Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
- Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
- Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
- Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
- Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
- 150 V, 329 A Enhancement Mode GaN Power Transistor
- 200 V, 260 A Enhancement Mode GaN Power Transistor
- Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable ...
- Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable ...
- 10A,650V Through-Hole MOSFET N-Channel Enhancement Mode High Current
10A,650V Through-Hole MOSFET N-Channel Enhancement Mode High Current- 10A,650V Through-Hole MOSFET N-Channel Enhancement Mode High Current
11A,600V Through-Hole MOSFET N-Channel Enhancement Mode - UltraMOS- 11A,600V Through-Hole MOSFET N-Channel Enhancement Mode - UltraMOS
