Datasheet Texas Instruments LF353MX
| Manufacturer | Texas Instruments |
| Series | LF353-N |
| Part Number | LF353MX |
Wide Bandwidth Dual JFET Input Operational Amplifier 8-SOIC 0 to 70
Datasheets
LF353 Wide Bandwidth Dual JFET Input Operational Amplifier datasheet
PDF, 1.0 Mb, Revision: F, File published: Mar 25, 2013
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Status
| Lifecycle Status | NRND (Not recommended for new designs) |
| Manufacture's Sample Availability | No |
Packaging
| Pin | 8 | 8 |
| Package Type | D | D |
| Industry STD Term | SOIC | SOIC |
| JEDEC Code | R-PDSO-G | R-PDSO-G |
| Package QTY | 2500 | 2500 |
| Carrier | LARGE T&R | LARGE T&R |
| Device Marking | LF353 | M |
| Width (mm) | 3.91 | 3.91 |
| Length (mm) | 4.9 | 4.9 |
| Thickness (mm) | 1.58 | 1.58 |
| Pitch (mm) | 1.27 | 1.27 |
| Max Height (mm) | 1.75 | 1.75 |
| Mechanical Data | Download | Download |
Replacements
| Replacement | LF353MX/NOPB |
| Replacement Code | S |
Parametrics
| Additional Features | N/A |
| Architecture | FET |
| CMRR(Min) | 70 dB |
| CMRR(Typ) | 100 dB |
| GBW(Typ) | 4 MHz |
| Input Bias Current(Max) | 200 pA |
| Iq per channel(Max) | 3.25 mA |
| Iq per channel(Typ) | 1.8 mA |
| Number of Channels | 2 |
| Offset Drift(Typ) | 10 uV/C |
| Operating Temperature Range | 0 to 70 C |
| Output Current(Typ) | 20 mA |
| Package Group | SOIC |
| Package Size: mm2:W x L | 8SOIC: 29 mm2: 6 x 4.9(SOIC) PKG |
| Rail-to-Rail | In to V+ |
| Rating | Catalog |
| Slew Rate(Typ) | 13 V/us |
| Total Supply Voltage(Max) | 36 +5V=5, +/-5V=10 |
| Total Supply Voltage(Min) | 10 +5V=5, +/-5V=10 |
| Vn at 1kHz(Typ) | 16 nV/rtHz |
| Vos (Offset Voltage @ 25C)(Max) | 10 mV |
Eco Plan
| RoHS | See ti.com |
Application Notes
- AN-447 Protection Schemes for BI-FET Amplifiers and SwitchesPDF, 80 Kb, File published: May 2, 2004
Application Note 447 Protection Schemes for BI-FET Amplifiers and Switches - AN-262 Applying Dual and Quad FET Op Amps (Rev. B)PDF, 1.1 Mb, Revision: B, File published: May 6, 2013
The availability of dual and quad packaged FET op amps offers the designer all the traditional capabilitiesof FET op amps including low bias current and speed and some additional advantages. The cost-peramplifieris lower because of reduced package costs. This means that more amplifiers are available toimplement a function at a given cost making design easier. At the same time the availab - AN-263 Sine Wave Generation Techniques (Rev. C)PDF, 747 Kb, Revision: C, File published: Apr 22, 2013
This application note describes the sine wave generation techniques to control frequency amplitude anddistortion levels. - AN-256 Circuitry for Inexpensive Relative Humidity Measurement (Rev. B)PDF, 262 Kb, Revision: B, File published: May 6, 2013
Of all common environmental parameters humidity is perhaps the least understood and most difficult tomeasure. The most common electronic humidity detection methods albeit highly accurate are not obviousand tend to be expensive and complex (See Box). Accurate humidity measurement is vital to a number ofdiverse areas including food processing paper and lumber production pollution monitor - Get More Power Out of Dual or Quad Op-AmpsPDF, 91 Kb, File published: Oct 2, 2002
Model Line
Series: LF353-N (5)
- LF353M LF353M/NOPB LF353MX LF353MX/NOPB LF353N/NOPB
Manufacturer's Classification
- Semiconductors > Amplifiers > Operational Amplifiers (Op Amps) > General-Purpose Op Amps
