Datasheet IRFP064 (Vishay)
| Manufacturer | Vishay |
| Description | Power MOSFET in TO-247AC package |
| Pages / Page | 11 / 1 — IRFP064. Power MOSFET. FEATURES. TO-247AC. Note. PRODUCT SUMMARY. … |
| File Format / Size | PDF / 1.2 Mb |
| Document Language | English |
IRFP064. Power MOSFET. FEATURES. TO-247AC. Note. PRODUCT SUMMARY. DESCRIPTION. ORDERING INFORMATION. ABSOLUTE MAXIMUM RATINGS
Model Line for this Datasheet
Text Version of Document
IRFP064
www.vishay.com Vishay Siliconix
Power MOSFET
D
FEATURES
• Dynamic dV/dt rating
TO-247AC
• Repetitive avalanche rated Available • Ultra low on-resistance Available G • Very low thermal resistance • Isolated central mounting hole • 175 °C operating temperature S D S • Fast switching G • Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc?99912
Note PRODUCT SUMMARY
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For VDS (V) 60 example, parts with lead (Pb) terminations are not RoHS-compliant. RDS(on) (Ω) VGS = 10 V 0.009 Please see the information / tables in this datasheet for details Qg (max.) (nC) 190
DESCRIPTION
Qgs (nC) 55 Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, Qgd (nC) 90 ruggedized device design, low on-resistance and Configuration Single cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION
Package TO-247AC Lead (Pb)-free IRFP064PbF
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 60 V Gate-source voltage VGS ± 20 Continuous drain current e T 70 V C = 25 °C GS at 10 V ID Continuous drain current T A C = 100 °C 70 Pulsed drain current a IDM 520 Linear derating factor 2.0 W/°C Single pulse avalanche energy b EAS 1000 mJ Repetitive avalanche current a IAR 70 A Repetitive avalanche energy a EAR 30 mJ Maximum Power Dissipation TC = 25 °C PD 300 W Peak Diode Recovery dV/dt c dV/dt 4.5 V/ns Operating Junction and Storage Temperature TJ, Tstg -55 to +175 °C Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 69 μH, Rg = 25 Ω, IAS = 130 A (see fig. 12) c. ISD ≤ 130 A, dI/dt ≤ 300 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case e. Current limited by the package (die current = 130 A) S22-0045-Rev. D, 24-Jan-2022
1
Document Number: 91201 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Power MOSFET
D
FEATURES
• Dynamic dV/dt rating
TO-247AC
• Repetitive avalanche rated Available • Ultra low on-resistance Available G • Very low thermal resistance • Isolated central mounting hole • 175 °C operating temperature S D S • Fast switching G • Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc?99912
Note PRODUCT SUMMARY
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For VDS (V) 60 example, parts with lead (Pb) terminations are not RoHS-compliant. RDS(on) (Ω) VGS = 10 V 0.009 Please see the information / tables in this datasheet for details Qg (max.) (nC) 190
DESCRIPTION
Qgs (nC) 55 Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, Qgd (nC) 90 ruggedized device design, low on-resistance and Configuration Single cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION
Package TO-247AC Lead (Pb)-free IRFP064PbF
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 60 V Gate-source voltage VGS ± 20 Continuous drain current e T 70 V C = 25 °C GS at 10 V ID Continuous drain current T A C = 100 °C 70 Pulsed drain current a IDM 520 Linear derating factor 2.0 W/°C Single pulse avalanche energy b EAS 1000 mJ Repetitive avalanche current a IAR 70 A Repetitive avalanche energy a EAR 30 mJ Maximum Power Dissipation TC = 25 °C PD 300 W Peak Diode Recovery dV/dt c dV/dt 4.5 V/ns Operating Junction and Storage Temperature TJ, Tstg -55 to +175 °C Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 69 μH, Rg = 25 Ω, IAS = 130 A (see fig. 12) c. ISD ≤ 130 A, dI/dt ≤ 300 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case e. Current limited by the package (die current = 130 A) S22-0045-Rev. D, 24-Jan-2022
1
Document Number: 91201 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000