Datasheets - Gate Drivers - 2
Subsection: "Gate Drivers"
Manufacturers
Analog Devices Diodes Efficient Power Conversion GaNPower International Infineon International Rectifier IXYS Linear Technology Microchip Renesas STMicroelectronics Texas Instruments Toshiba TRINAMICSearch results: 310 Output: 21-40
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3-A/3-A dual-channel gate driver with 35-V VDD 16-CDIP -55 to 125
Single-channel isolated gate-driver IC in 150 mil DSO-8 package The EiceDRIVER 1EDB family of single-channel gate-driver ICs provides an input-to-output isolation of 3kV rms . With +4/-6ns propagation delay accuracy the gate driver family is ...
- Single-channel isolated gate-driver IC in 150 mil DSO-8 package The EiceDRIVER 1EDB8275F provides an input-to-output isolation of 3kV rms . With a propagation delay accuracy of +4/-6ns, the gate driver is optimized for fast-switching applications ...
- Single-channel isolated gate-driver IC in 150 mil DSO-8 package The EiceDRIVER 1EDB7275F provides an input-to-output isolation of 3kV rms . With a propagation delay accuracy of +4/-6ns, the device is optimized for fast-switching applications with ...
- Single-channel isolated gate-driver IC in 150 mil DSO-8 package The EiceDRIVER 1EDB family of single-channel gate-driver ICs provides an input-to-output isolation of 3kV rms . With +4/-6ns propagation delay accuracy the gate driver family is ...
- High power density 600V half-bridge driver with two enhancement mode GaN HEMT All features 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: QFN 9 x 9 x 1 mm package R DS(ON) = 225 mΩ I DS(MAX) ...
- Galvanically isolated 4 A single gate driver for SiC MOSFETs All features High voltage rail up to 1200 V Driver current capability: 4 A sink/source @25°C dV/dt transient immunity ±100 V/ns in full temperature range Overall input-output propagation ...
- High power density 600V Half bridge driver with two enhancement mode GaN HEMT The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration. The ...
24 V dual-channel low-side gate driver with high current for driving large power switches EiceDRIVER 24 V dual-channel low-side non-inverting gate driver for MOSFETs or IGBTs with typical 10 A source and sink currents in a DSO-8 package with ...- 200 V high-side and low-side gate driver IC 200 V High and Low Side Driver IC with typical 1 A source and 1 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC.
200 V high-side and low-side gate driver IC 200 V High and Low Side Driver IC with typical 1 A source and 1 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC.
5.7 kV, 3 A single-channel highly flexible isolated gate driver with I2C configurability for DESAT, Soft-Off, UVLO, Miller clamp, TLTO and Fault EiceDRIVER Enhanced single-channel highly flexible isolated gate driver with ±3 A typical sinking and ...- 5.7 kV, 9 A single-channel flexible isolated gate driver with active Miller clamp, adjustable DESAT and Soft-off EiceDRIVER Enhanced single-channel highly flexible isolated gate driver with ±9 A typical sinking and sourcing peak output current in ...
- Triple half-bridge gate driver The STDRIVE101 is a low voltage gate driver suitable for driving three-phase brushless motors. It is a single-chip with three half-bridge gate drivers for N-channel power MOSFETs. Each driver has a current capability ...
1200 V, 0.65 A three phase gate driver with integrated bootstrap diode and over current protection in DSO-24 package 1200-V three-phase SOI gate driver with integrated bootstrap diode and over-current protection with typical 0.35 A source and 0.65 ...- Galvanically isolated 4 A single gate driver The STGAP2HS is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry. The gate driver is characterized by 4 A ...
80 V, 12.5 A ePower Stage Rated Output Current (1 MHZ)(1), 12.5 A Operating PWM Frequency Range(2), 3 MHz Operating Input Voltage Range, 60 V Bias Supply Voltage, 12 V Output Current and PWM Frequency Ratings are functions of Operating Conditions- 80 V Enhancement-Mode GaN Power Transistor Half Bridge
- 60 V Enhancement-Mode GaN Power Transistor Half Bridge
1-channel non-isolated gate-driver IC family with truly differential inputs