Datasheets - Single FETs, MOSFETs - 8

Subsection: "Single FETs, MOSFETs"
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  1. N-channel 500 V, 2.2 Ω typ., 3 A SuperMESH Power MOSFETs in IPAK and DPAK packages These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the ...
  2. Datasheet Vishay SiHF840L-GE3
    Power MOSFET Third generation power MOSFETs from Vishay provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
  1. Datasheet Vishay IRF840LPbF
    Power MOSFET Third generation power MOSFETs from Vishay provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
  2. Datasheet Vishay IRFP9140PbF
    Power MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
  3. Datasheet Vishay IRFP140PbF
    Power MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
  4. Datasheet Vishay IRF510PbF
    Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
  5. -60V-100V Small Signal MOSFET Package:SOT-23
  6. P-Channel, POWERTRENCH, Logic Level MOSFET This 60 V P−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications.
  7. Datasheet Vishay Si3457CDV-T1-GE3
    P-Channel 30 V (D-S) MOSFET TrenchFET power MOSFET
  8. N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
  9. N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
  10. N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
  11. Datasheet Vishay SiHF640
    Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
  12. Datasheet Vishay IRF640PbF
    Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
  13. 150 V, 329 A Enhancement Mode GaN Power Transistor
  14. 200 V, 260 A Enhancement Mode GaN Power Transistor
  15. Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable ...
  16. Datasheet Central Semiconductor CDM22010-650
    10A,650V Through-Hole MOSFET N-Channel Enhancement Mode High Current
  17. Datasheet Central Semiconductor CDM22011-600LRFP SL
    11A,600V Through-Hole MOSFET N-Channel Enhancement Mode - UltraMOS
  18. N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...