Datasheets - Single FETs, MOSFETs - 8

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141. MTP10N08 — Datasheet New Jersey Semiconductor
     Single FETs, MOSFETs New Jersey Semiconductor MTP10N08
     N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...
142. MTP10N10 — Datasheet New Jersey Semiconductor
     Single FETs, MOSFETs New Jersey Semiconductor MTP10N10
     N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...

143. IRF120 — Datasheet New Jersey Semiconductor
     Single FETs, MOSFETs New Jersey Semiconductor IRF120
     N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...
144. IRF121 — Datasheet New Jersey Semiconductor
     Single FETs, MOSFETs New Jersey Semiconductor IRF121
     N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...
145. IRF122 — Datasheet New Jersey Semiconductor
     Single FETs, MOSFETs New Jersey Semiconductor IRF122
     N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...
146. IRF123 — Datasheet New Jersey Semiconductor
     Single FETs, MOSFETs New Jersey Semiconductor IRF123
     N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...
147. IRF520 — Datasheet New Jersey Semiconductor
     Single FETs, MOSFETs New Jersey Semiconductor IRF520
     N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...
148. IRF521 — Datasheet New Jersey Semiconductor
     Single FETs, MOSFETs New Jersey Semiconductor IRF521
     N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...
149. IRF522 — Datasheet New Jersey Semiconductor
     Single FETs, MOSFETs New Jersey Semiconductor IRF522
     N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...
150. IRF523 — Datasheet New Jersey Semiconductor
     Single FETs, MOSFETs New Jersey Semiconductor IRF523
     N-Channel Power MOSFETs, 11 A, 60-100 V These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers ...
151. IRF1010N — Datasheet International Rectifier
     Single FETs, MOSFETs International Rectifier IRF1010N
     HEXFET Power MOSFET Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized ...
152. HUF75652G3 — Datasheet ON Semiconductor
     Single FETs, MOSFETs ON Semiconductor HUF75652G3
     N-Channel UltraFET Power MOSFET 100V, 75A, 8mΩ
153. IXTH44P15T — Datasheet IXYS
     Single FETs, MOSFETs IXYS IXTH44P15T
     TrenchP Power MOSFETs Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry ...
154. IXTQ44P15T — Datasheet IXYS
     Single FETs, MOSFETs IXYS IXTQ44P15T
     TrenchP Power MOSFETs Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry ...
155. IXTA44P15T — Datasheet IXYS
     Single FETs, MOSFETs IXYS IXTA44P15T
     TrenchP Power MOSFETs Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry ...
156. IXTP44P15T — Datasheet IXYS
     Single FETs, MOSFETs IXYS IXTP44P15T
     TrenchP Power MOSFETs Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry ...
157. BSS123 — Datasheet ON Semiconductor
     Single FETs, MOSFETs ON Semiconductor BSS123
     N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state ...
158. SI1470DH-T1-E3 — Datasheet Vishay
     Single FETs, MOSFETs Vishay SI1470DH SI1470DH-T1-E3
     N-Channel 30 V (D-S) MOSFET
159. IRL3103PbF — Datasheet International Rectifier
     Single FETs, MOSFETs International Rectifier IRL3103PbF
     30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Advanced HEXFETÆ Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined ...
160. MTP3N60E/D — Datasheet ON Semiconductor
     Single FETs, MOSFETs ON Semiconductor MTP3N60E MTP3N60E/D
     TMOS E−FET High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device ...