Datasheets - MOSFET Single Transistors - 2

Subsection: "MOSFET Single Transistors"
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  1. Datasheet Vishay SiRA99DP-T1-GE3
    P-Channel 30 V (D-S) MOSFET
  2. P-Channel 30 V (D-S) MOSFET
  3. Datasheet International Rectifier IRL540NPBF
    MOSFET, N, 100 V, 36 A, TO-220 Specifications: Continuous Drain Current Id: 30 A Current Id Max: 36 A Current Temperature: 25 C Drain Source Voltage Vds: 100 V Full Power Rating Temperature: 25 C Junction to Case Thermal Resistance A: 1.1 C/W Lead ...
  4. P-Channel 1.8V Specified PowerTrench MOSFET -20V, -2.4A, 52mΩ
  1. P-Channel 1.8V Specified PowerTrench MOSFET -20V, -2.4A, 52mΩ
  2. Datasheet Vishay SiZF300DT-T1-GE3
    Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
  3. Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
  4. HF / VHF power LDMOS transistor A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
  5. Datasheet Ampleon BLF978PU
    HF / VHF power LDMOS transistor A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
  6. HF / VHF power LDMOS transistor A 500 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
  7. Datasheet Ampleon BLF974PU
    HF / VHF power LDMOS transistor A 500 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
  8. 30V Synchronous N-Channel Enhancement Mode MOSFET This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
  9. 30V Synchronous N-Channel Enhancement Mode MOSFET This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
  10. HEXFET Power MOSFET, V DSS = 55 V, R DS(on) = 16.5 mΩ, I D = 30 A, TO-220AB
  11. HEXFET Power MOSFET, V DSS = 55 V, RDS (on) = 0.035 Ω, I D = 30 A, TO-220AB
  12. MOSFET, 55 V, 12 A, TO-220 Specifications: Continuous Drain Current Id: 12 A Current Id Max: -12 A Current Temperature: 25 C Drain Source Voltage Vds: 55 V Full Power Rating Temperature: 25 C Junction to Case Thermal Resistance A: 3.3 C/W Lead ...
  13. Datasheet International Rectifier IRF9Z24NPBF
    MOSFET, 55 V, 12 A, TO-220 Specifications: Continuous Drain Current Id: 12 A Current Id Max: -12 A Current Temperature: 25 C Drain Source Voltage Vds: 55 V Full Power Rating Temperature: 25 C Junction to Case Thermal Resistance A: 3.3 C/W Lead ...
  14. Silicon Carbide MOSFET, Enhancement Mode
  15. N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh Power MOSFET in D2PAK package These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the ...
  16. N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh Power MOSFET in TO-220 package These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the ...