Datasheets - Single FETs, MOSFETs ON Semiconductor
Subsection: "Single FETs, MOSFETs"
Manufacturer: "ON Semiconductor"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSeries
2N7000 2N7002 BS107A BS108 BSS123 BSS138 CPH3362 FDC6312P FDD4141 FDMA430NZ FDMS86500L FDMS8690 FDN302P FDN304P FDN335N FDN336P FDN340P FDS6575 FDS6675 FDS6890A FDV302P FDV303N FQP27P06 HUF75652G3 IRF530 MCH6613 MTD20P06HDL MTP20N20E MTP2P50E MTP33N10E MTP36N06V MTP3N60E MTP50P03HDL MTW24N40E NDS0610 NDS331N NDS351AN NDS7002A NDS8434 NTBG015N065SC1 NTD3055L104 NTD3055L170 NTD4815NH NTD6600N NTDV3055L104 NTH4L015N065SC1 NTZD3155C NVBG015N065SC1 NVD3055L170 NVH4L015N065SC1 RFP12N10LSearch results: 247 Output: 1-20
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Single N-Channel 2.5V Specified PowerTrench MOSFET 30V, 5.0A, 40mΩ This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.
Small Signal MOSFET, 30V, 0.35A, 3.7Ω, -30V, -0.2A, 10.4Ω, Complementary MCPH6 Obsolete MCH6613 is a Small Signal MOSFET, 30V, 0.35A, 3.7Ω, -30V, -0.2A, 10.4Ω, Complementary MCPH6 for General-Purpose Switching Device ...
- Single FETs, MOSFETs ON Semiconductor MTP33N10E
Transistors, Transistor Arrays & Modules ON Semiconductor MTP33N10EPower MOSFET 33 Amps, 100 Volts This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low ... - Single FETs, MOSFETs ON Semiconductor MTP20N20E
Transistors, Transistor Arrays & Modules ON Semiconductor MTP20N20EPower MOSFET 20 Amps, 200 Volts This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low ... - Single FETs, MOSFETs ON Semiconductor CPH3362
Transistors, Transistor Arrays & Modules ON Semiconductor CPH3362Power MOSFET 100V, 1.7Ω, 0.7A, Single P-Channel - Small Signal MOSFET 250 mA, 200 V, N−Channel
- Power MOSFET -30V -50A 25 mOhm Single P-Channel TO-220 Logic Level This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery ...
- N-Channel Logic Level Enhancement Mode Field Effect Transistor 20V, 1.3A, 0.21Ω These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS ...
- Single P-Channel Logic Level PowerTrench MOSFET -20V, -2A, 70mΩ This P-Channel Logic Level MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low ...
- N-Channel Logic Level PowerTrench MOSFET 30V, 1.4A, 160mΩ These N-Channel Logic Level MOSFETs are produced using ON Semiconductor Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state ...
- N-Channel UltraFET Power MOSFET 100V, 75A, 8mΩ
- N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state ...
- TMOS E−FET High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device ...
- Small Signal MOSFET 200V 250mA 10 Ohm Single N-Channel TO-92 Logic Level This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface ...
- N-Channel Digital FET 25V, 0.68A, 0.45Ω These N-Channel enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at ...
- Power MOSFET 32 Amps, 60 Volts N−Channel TO−220 This device is obsolete.
- Power MOSFET 30V 35A 15 mOhm Single N-Channel DPAK Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK
- Power MOSFET Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK
- Silicon Carbide MOSFET, N‐Channel, 650V, 15.6 mΩ, TO247−4L Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and ...
- Silicon Carbide MOSFET, N‐Channel, 650V, 12 mΩ, TO247−4L Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and ...
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