Datasheets - Single FETs, MOSFETs - 2
Subsection: "Single FETs, MOSFETs"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse Magnachip MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba VBsemi Vishay Wayon WolfspeedSearch results: 7,009 Output: 21-40
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N-CH DEPL MOSFET 250V 10 OHMS SOT-89 TR | Series: N-Channel Depletion-Mode MOSFETs Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes ...
N-Channel MOSFET Transistor in DPAK/TO-252 package
N-Channel MOSFET 650V, 12A, 0.65Ω in TO-220F package
N-channel 900 V, 1.1 Ω, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH Power MOSFET
N-Channel Power MOSFET in TO-247-3 package
Automotive N-Channel 80 V (D-S) 175 C MOSFET
P-Channel 100-V (D-S) MOSFET Halogen-free According to IEC 61249-2-21 Available. TrenchFET Power MOSFET
Single N-Channel 2.5V Specified PowerTrench MOSFET 30V, 5.0A, 40mΩ This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.
20 V, single P-channel Trench MOSFET P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
20 V, single P-channel Trench MOSFET P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.- 20 V, N-channel Trench MOSFET N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 40 V, N-channel Trench MOSFET N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 20 V, P-channel Trench MOSFET P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 20 V, P-channel Trench MOSFET P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.5V Drive Nch MOSFET (AEC-Q101 Qualified) in SOT-323 Package MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, ...- 2.5V Drive N-channel MOSFET
- 40V +175 C N-Channel Enhancement Mode MOSFET This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: power-management functions, DC-DC ...
40V Complementary Enhancement Mode MOSFET H-Bridge This new generation complementary MOSFET H-Bridge features 2 N and 2 P channel in an SOIC package.
N-channel 30 V 8 mΩ logic level MOSFET in LFPAK Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications ...
Small Signal MOSFET, 30V, 0.35A, 3.7Ω, -30V, -0.2A, 10.4Ω, Complementary MCPH6 Obsolete MCH6613 is a Small Signal MOSFET, 30V, 0.35A, 3.7Ω, -30V, -0.2A, 10.4Ω, Complementary MCPH6 for General-Purpose Switching Device ...