Datasheets - Single FETs, MOSFETs - 2
Subsection: "Single FETs, MOSFETs"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse Magnachip MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba VBsemi Vishay Wayon Wolfspeed YoutaiSearch results: 7,014 Output: 21-40
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Power MOSFET in TO-247AC package Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for ...
40V N-Channel MOSFET in TO252 package The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) ...
P-channel 30-V (D-S) MOSFET in SOP8 package It has high current carrying capacity and low on-resistance, and is particularly suitable for power switching and circuit control.- High-performance P-channel MOSFET in SOP8 package This MOSFET has a drain-source withstand voltage of -30V and a drain current handling capability of up to -9A. Its low on-resistance and good current handling capability make it very suitable for ...
N-Channel MOSFET Transistor in TO-220 package- N-Channel MOSFET Transistor in TO-220 package
- N-Channel Enhancement Mode Transistors in 4-PIN DIP (Similar to TO-250) package
- N-Channel Enhancement Mode Transistors in 4-PIN DIP (Similar to TO-250) package
- N-Channel MOSFET Transistor in TO-247 package Features Drain Current: ID= 26A@ TC=25℃ Drain Source Voltage: VDSS= 500V(Min) Static Drain-Source On-Resistance: RDS(on) = 0.2Ω (Max) @ VGS= 10V 100% avalanche tested Minimum Lot-to-Lot variations ...
- Power MOSFET in TO-247 package Features Dynamic dV/dt rating Repetitive avalanche rated Isolated central mounting hole
- Power MOSFET in TO-220 package Dynamic dV/dt rating P-channel Fast switching
N-CH DEPL MOSFET 250V 10 OHMS SOT-89 TR | Series: N-Channel Depletion-Mode MOSFETs Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes ...- N-Channel MOSFET Transistor in DPAK/TO-252 package
N-Channel MOSFET 650V, 12A, 0.65Ω in TO-220F package- N-channel 900 V, 1.1 Ω, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH Power MOSFET
N-Channel Power MOSFET in TO-247-3 package
Automotive N-Channel 80 V (D-S) 175 C MOSFET
P-Channel 100-V (D-S) MOSFET Halogen-free According to IEC 61249-2-21 Available. TrenchFET Power MOSFET
Single N-Channel 2.5V Specified PowerTrench MOSFET 30V, 5.0A, 40mΩ This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.
20 V, single P-channel Trench MOSFET P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.