Datasheets - Single FETs, MOSFETs - 3
Subsection: "Single FETs, MOSFETs"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSearch results: 8,162 Output: 41-60
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- 400V N-Channel HEXFET Transistors The HEXFET technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design ...
- HEXFET Power MOSFET Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C ...
- HEXFET Power MOSFET Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C ...
- HEXFET Power MOSFET Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C ...
- Single FETs, MOSFETs STMicroelectronics STF19NF20
Transistors, Transistor Arrays & Modules STMicroelectronics STF19NF20N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ... - Single FETs, MOSFETs STMicroelectronics STD19NF20
Transistors, Transistor Arrays & Modules STMicroelectronics STD19NF20N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ... - Single FETs, MOSFETs STMicroelectronics STB19NF20
Transistors, Transistor Arrays & Modules STMicroelectronics STB19NF20N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ... - Single FETs, MOSFETs STMicroelectronics STP19NF20
Transistors, Transistor Arrays & Modules STMicroelectronics STP19NF20N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ... - N-Channel MOSFET Transistor Motor drive, DC-DC converter, power switch and solenoid drive
- Super Low Noise HEMT The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. This device is packaged in cost effective, low parasitic, hermetically ...
- Power MOSFET -30V -50A 25 mOhm Single P-Channel TO-220 Logic Level This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery ...
- Power MOSFET -30V -50A 25 mOhm Single P-Channel TO-220 Logic Level This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery ...
- Power MOSFET -30V -50A 25 mOhm Single P-Channel TO-220 Logic Level This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery ...
- HEXFET Power MOSFET
- Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
- Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
- Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
- Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
- Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
- Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
