Datasheets - Single FETs, MOSFETs - 3
Subsection: "Single FETs, MOSFETs"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse Magnachip MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba VBsemi Vishay Wayon WolfspeedSearch results: 7,009 Output: 41-60
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P-Channel Enhancement Mode MOSFET This new generation 100V Pchannel enhancement mode MOSFET has been designed to minimise R DS(on) and yet maintain superior switching performance. This device is ideally suited to DC/DC power management and ...
RF power GaN-SiC HEMT 30 W GaN-SiC HEMT power transistor optimized with best Continuous Wave (CW) power and efficiency for applications in cooking, industrial, scientific and medical at frequencies from 2400 MHz to 2500 MHz. The CLP24H4S30P is ...
RF power GaN-SiC HEMT 300 W GaN-SiC HEMT power transistor optimized with best continuous wave (CW) power and efficiency for applications in cooking, industrial, scientific and medical at frequencies from 2400 MHz to 2500 MHz. The CLF24H4LS300P is ...
20V 1A Nch Power MOSFET The ultra-small package(1006size) RV2C010UN is suitable for portable devices.
2.5V Drive P-channel MOSFET Products discontinuation (EOL) has been announced.- N-Channel MOSFET Transistor in TO-3 Package
1.2V Drive Nch MOSFET MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the ...- The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage ...
- The IGC033S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage ...
- P-channel enhancement mode Field-Effect Transistor (FET), -30 V, SOT-23 Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed the highest quality ...
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package- UHF power LDMOS transistor A 1000 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 180 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog ...
UHF power LDMOS transistor A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device ...
UHF power LDMOS transistor A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device ...- 30V P-Channel MOSFET The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
- P-Channel 1.8V Specified PowerTrench MOSFET This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.
- P-CHANNEL ENHANCEMENT MODE MOSFET This MOSFET has been designed to minimize the on-state resistance (R DS(ON) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Single FETs, MOSFETs ON Semiconductor MTP33N10E
Transistors, Transistor Arrays & Modules ON Semiconductor MTP33N10EPower MOSFET 33 Amps, 100 Volts This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low ... - Single FETs, MOSFETs ON Semiconductor MTP20N20E
Transistors, Transistor Arrays & Modules ON Semiconductor MTP20N20EPower MOSFET 20 Amps, 200 Volts This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low ... - N- P-Channel Enhancement Mode Field Effect Transistor