Datasheets - Single FETs, MOSFETs - 3

Subsection: "Single FETs, MOSFETs"
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  1. Power MOSFET 100V, 1.7Ω, 0.7A, Single P-Channel
  2. Power MOSFET 100V, 1.7Ω, 0.7A, Single P-Channel
  1. N-Channel MOSFET
  2. N-Channel MOSFET
  3. N-Channel MOSFET
  4. N-Channel MOSFET
  5. N-Channel MOSFET
  6. Field-Effect Transistor
  7. Small Signal MOSFET 250 mA, 200 V, N−Channel
  8. Small Signal MOSFET 250 mA, 200 V, N−Channel
  9. N-Channel Enhancement Mode MOSTET
  10. N-Channel MOSFET Transistor
  11. 400V N-Channel HEXFET Transistors The HEXFET technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design ...
  12. HEXFET Power MOSFET Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C ...
  13. HEXFET Power MOSFET Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C ...
  14. HEXFET Power MOSFET Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C ...
  15. N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ...
  16. N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ...
  17. N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ...
  18. N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ...