P-Channel 1.8V Specified PowerTrench MOSFET This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.
P-CHANNEL ENHANCEMENT MODE MOSFET This MOSFET has been designed to minimize the on-state resistance (R DS(ON) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Power MOSFET 33 Amps, 100 Volts This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low ...
Power MOSFET 20 Amps, 200 Volts This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low ...
400V N-Channel HEXFET Transistors The HEXFET technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design ...
HEXFET Power MOSFET Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C ...
HEXFET Power MOSFET Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C ...
HEXFET Power MOSFET Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C ...
N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ...
N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ...
N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ...
N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ...