Datasheets - Single FETs, MOSFETs - 9

Subsection: "Single FETs, MOSFETs"
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  1. Datasheet Vishay Si3457CDV-T1-E3
    P-Channel 30 V (D-S) MOSFET TrenchFET power MOSFET
  2. Datasheet Vishay Si3457CDV-T1-GE3
    P-Channel 30 V (D-S) MOSFET TrenchFET power MOSFET
  1. N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
  2. N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
  3. N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
  4. N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
  5. Datasheet Vishay SiHF640
    Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
  6. Datasheet Vishay SiHF640-E3
    Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
  7. Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
  8. Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
  9. Datasheet Vishay IRF640PbF
    Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
  10. Datasheet Vishay IRF640
    Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
  11. 150 V, 329 A Enhancement Mode GaN Power Transistor
  12. 200 V, 260 A Enhancement Mode GaN Power Transistor
  13. Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable ...
  14. Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable ...
  15. 10A,650V Through-Hole MOSFET N-Channel Enhancement Mode High Current
  16. Datasheet Central Semiconductor CDM22010-650
    10A,650V Through-Hole MOSFET N-Channel Enhancement Mode High Current
  17. Datasheet Central Semiconductor CDM22010-650 SL
    10A,650V Through-Hole MOSFET N-Channel Enhancement Mode High Current
  18. Datasheet Central Semiconductor CDM22011-600LRFP SL
    11A,600V Through-Hole MOSFET N-Channel Enhancement Mode - UltraMOS