Datasheets - Single FETs, MOSFETs - 10
Subsection: "Single FETs, MOSFETs"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSearch results: 8,161 Output: 181-200
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- TrenchP Power MOSFETs Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry ...
- TrenchP Power MOSFETs Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry ...
- TrenchP Power MOSFETs Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry ...
- TrenchP Power MOSFETs Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry ...
- N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state ...
- N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state ...
- N-Channel 30 V (D-S) MOSFET
- N-Channel 30 V (D-S) MOSFET
- N-Channel 30 V (D-S) MOSFET
- 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Advanced HEXFETÆ Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined ...
- TMOS E−FET High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device ...
N-Channel 30 V (D-S) MOSFET- N-Channel 30 V (D-S) MOSFET
- N-Channel 30 V (D-S) MOSFET
30V N Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150- 30V Single N-Channel Power MOSFET in a I-Pak package The StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The ...
- 30V Single N-Channel Power MOSFET in a I-Pak package The StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The ...
- 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
- 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
- 30V Logic Level Single N-Channel StrongIRFET Power MOSFET in a TO-220 package The StrongIRFET power MOSFET family is optimized for low R DS(on) and high current capability. The devices are ideal for low frequency applications requiring performance ...
