Datasheets - Single FETs, MOSFETs - 10
Subsection: "Single FETs, MOSFETs"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse Magnachip MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba VBsemi Vishay Wayon WolfspeedSearch results: 7,002 Output: 181-200
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- N-Channel Logic Level Enhancement Mode Field Effect Transistor
- N-Channel Logic Level Enhancement Mode Field Effect Transistor
Power MOSFET- N-Channel Enhancement-Mode Transistor
P-Channel 80 V (D-S) MOSFET- N-Channel 60-V (D-S) Rated MOSFET
N-channel dual-gate MOSFET No Longer Manufactured NXP no longer accepts orders for the part and will no longer manufacture the part.
N-channel dual-gate MOSFET No Longer Manufactured NXP no longer accepts orders for the part and will no longer manufacture the part. Replacement part(s): BF1211.
Power MOSFET
N-Channel 100 V (D-S) MOSFET- Power MOSFET
- Power MOSFET 32 Amps, 60 Volts N−Channel TO−220 This device is obsolete.
- -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET
- PowerMOS Transistor
- PowerMOS Transistor
- Power MOSFET 30V 35A 15 mOhm Single N-Channel DPAK Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK
Digital FET, N-Channel Specifications: Continuous Drain Current Id: 220 mA Current Id Max: 220 mA Current Temperature: 25 C Drain Source Voltage Vds: 25 V ESD HBM: 6 kV External Depth: 2.5 mm External Length / Height: 1.12 mm External Width: 3.05 ...- Power MOSFET Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK
- 30V N-Channel MOSFET
- 30V N-Channel MOSFET