N-channel dual-gate MOSFET No Longer Manufactured NXP no longer accepts orders for the part and will no longer manufacture the part. Replacement part(s): BF1211.
Digital FET, N-Channel Specifications: Continuous Drain Current Id: 220 mA Current Id Max: 220 mA Current Temperature: 25 C Drain Source Voltage Vds: 25 V ESD HBM: 6 kV External Depth: 2.5 mm External Length / Height: 1.12 mm External Width: 3.05 ...
N-channel 45 V, 1.4 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package All features Among the lowest R DS(on) on the market Excellent FoM (figure of merit) Low C rss /C iss ratio for EMI immunity High avalanche ruggedness
N-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a TO-220 package All features Extremely high dv/dt capability Gate charge minimized 100% avalanche tested