International Rectifier, IR introduced the IRF6665 DirectFETTM MOSFET for medium power Class D audio amplifiers. The device parameters are tuned specifically for improved audio performance such as efficiency, total harmonic distortion (THD) and power density. Applications for Class D amplifiers range from battery-powered portable products to high-end professional amplifiers, musical instruments and car and home multimedia systems.
In addition to application-tuned silicon, IR's DirectFET packaging technology enhances performance in Class D audio amplifier circuits by reducing lead inductance, which improves switching performance and reduces EMI noise. Thermal efficiency enables 100W operation into 8ohms without a heatsink. Eliminating heatsinks shrinks circuit size and bulk, giving designers more layout flexibility and reduces amplifier cost.
Critical MOSFET parameters determining Class D audio performance include device on-resistance, or RDS(on) and gate charge, or Qg. These can parameters determine efficiency in a Class D audio amplifier.
| Part Number | Package | BVDSS(V) | RDS(on) typ @10V(mOhm) | ID @ Tc=25єC(A) | QG typ.(nC) | QSW typ.(nC) |
| IRF6665 | DirectFETTM | 100 | 51 | 19 | 8 | 3.5 |
Availability and Pricing
The new IRF6665 Class D audio DirectFETTM MOSFET is available immediately. Pricing is US $0.52 each in 10,000-unit quantities.
