News & Press Releases Power

Subsection: "Power"
Search results: 974 Output: 1-10
  1. Supply Power EPC EPC9159
    EPC announces the availability of the EPC9159, a 48 V / 12 V, LLC converter designed for high-density 48 V server power and DC-DC converters. This reference design can deliver 1 kW of power in a tiny 17.5 mm × 22.8 mm footprint for a power ...
    21-09-2023
  2. Discretes Power EPC EPC2304 EPC2305
    EPC introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3 mm × 5 mm footprint. These devices are the lowest on-resistance (R DS(on) ) FETs in the market at 150 ...
    20-12-2022
  1. Drivers Power EPC EPC9176 EPC23102
    The EPC9176 GaN-based inverter reference design enhances motor drive system performance, range, precision, torque, all while simplifying design. The extremely small size of this inverter allows integration into the motor housing resulting in the ...
    20-10-2022
  2. Drivers Supply Power EPC EPC23101 EPC2302
    EPC announces the introduction of a 100 V, 65 A integrated circuit chipset designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones. The EPC23101 eGaN IC plus ...
    31-12-2021
  3. Sensors Power Aceinna MCA1101 MRA1101
    65 Amp, AMR Based, Fully Isolated Current Sensor available in 3.3- and 5-Volt versions ACEINNA announced the high current 65 Amp MCx1101 Current Sensor, the industry’s most accurate and highest bandwidth current sensor. Designed for WBG ...
    20-12-2021
  4. ON Semiconductor has announced a pair of 1200 V full silicon carbide (SiC) MOSFET 2-PACK modules further enhancing their range of products suitable for the challenging electric vehicle (EV) market. As sales of EV continue to grow, infrastructure ...
    01-07-2021
  5. Discretes Power UnitedSiC UF3C065080B7S UF3C120150B7S UF3SC065030B7S UF3SC120040B7S
    UnitedSiC continues to expand its FET portfolio with the introduction of six new 650 V and 1200 V options, all housed in the industry standard D2PAK-7L surface mount package. Available in 30, 40, 80 and 150 mΩ versions, these latest SiC FETs ...
    08-06-2021
  6. Power Vishay SiSS52DN
    Vishay Intertechnology introduced a versatile new 30 V n-channel TrenchFET® Gen V power MOSFET that delivers increased power density and efficiency for both isolated and non-isolated topologies. Offered in the 3.3 mm by 3.3 mm thermally ...
    27-05-2021
  7. Highest efficiency is a key requirement for today’s power electronics. Therefore, Infineon Technologies introduces its latest isolated EiceDRIVER™ 2L-SRC Compact (1ED32xx) gate driver family in a compact form factor. The gate driver ...
    18-05-2021
  8. Power switches based on the wide bandgap (WBG) material gallium nitride (GaN) enable excellent efficiency and high switching frequency, starting a new era in power electronics. To support this development, Infineon Technologies adds the new ...
    14-05-2021
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