News & Press Releases Power

Subsection: "Power"
Search results: 971 Output: 1-10
  1. Drivers Supply Power EPC EPC23101 EPC2302
    EPC announces the introduction of a 100 V, 65 A integrated circuit chipset designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones. The EPC23101 eGaN IC plus ...
    31-12-2021
  2. Sensors Power Aceinna MCA1101 MRA1101
    65 Amp, AMR Based, Fully Isolated Current Sensor available in 3.3- and 5-Volt versions ACEINNA announced the high current 65 Amp MCx1101 Current Sensor, the industry’s most accurate and highest bandwidth current sensor. Designed for WBG ...
    20-12-2021
  3. ON Semiconductor has announced a pair of 1200 V full silicon carbide (SiC) MOSFET 2-PACK modules further enhancing their range of products suitable for the challenging electric vehicle (EV) market. As sales of EV continue to grow, infrastructure ...
    01-07-2021
  4. Discretes Power UnitedSiC UF3C065080B7S UF3C120150B7S UF3SC065030B7S UF3SC120040B7S
    UnitedSiC continues to expand its FET portfolio with the introduction of six new 650 V and 1200 V options, all housed in the industry standard D2PAK-7L surface mount package. Available in 30, 40, 80 and 150 mΩ versions, these latest SiC FETs ...
    08-06-2021
  1. Power Vishay SiSS52DN
    Vishay Intertechnology introduced a versatile new 30 V n-channel TrenchFET® Gen V power MOSFET that delivers increased power density and efficiency for both isolated and non-isolated topologies. Offered in the 3.3 mm by 3.3 mm thermally ...
    27-05-2021
  2. Highest efficiency is a key requirement for today’s power electronics. Therefore, Infineon Technologies introduces its latest isolated EiceDRIVER™ 2L-SRC Compact (1ED32xx) gate driver family in a compact form factor. The gate driver ...
    18-05-2021
  3. Power switches based on the wide bandgap (WBG) material gallium nitride (GaN) enable excellent efficiency and high switching frequency, starting a new era in power electronics. To support this development, Infineon Technologies adds the new ...
    14-05-2021
  4. The STMicroelectronics MasterGaN4 power packages integrate two symmetrical 650 V gallium nitride (GaN) power transistors with 225 mΩ R DS(on) , alongside optimized gate drivers and circuit protection to simplify the design of high-efficiency ...
    15-04-2021
  5. Supply Power Vishay SiC822 SiC822A SiC820 SiC820A SiC840 SiC840A SiC832 SiC832A SiC830 SiC830A
    For Infrastructure, Cloud Computing, and Graphic Cards Applications, Devices Feature Integrated Current and Temperature Monitoring in PowerPAK® 5 mm × 6 mm Package Vishay Intertechnology introduced nine new 70 A, 80 A, and 100 A ...
    23-03-2021
  6. Power Toshiba TK065U65Z TK090U65Z TK110U65Z TK155U65Z TK190U65Z
    The new compact SMD TOLL format helps reduce the size of equipment and the Kelvin source connection improves efficiency Toshiba Electronics Europe has announced five 650V superjunction power MOSFETs housed in the new compact SMD package in ...
    15-03-2021