Electronics ru
Advanced Search +
News » Memory

News: Memory

Search results: 88   Output: 1-10
  1. The optimal solution to eliminate batteries for SRAM in industrial machinery Fujitsu Semiconductor announced that it has developed the MB85R8M2T , an 8 Mbit FRAM that has the largest density in Fujitsu's family of FRAM non-volatile memories. ...
    Memory » Fujitsu » MB85R8M2T
  2. Optimal for applications in industrial machinery that require high reliability in extremely cold environments Fujitsu Semiconductor announced that it has developed the MB85RS64TU , a 64-Kbit FRAM. This memory is capable of operating at temperatures ...
    Memory » Fujitsu » MB85RS64TU
  3. Extended temperature memory products address data storage demands of increasingly complex applications including infotainment and ADAS Toshiba Memory Europe GmbH has begun sample shipments of embedded NAND flash memory products for automotive ...
  4. New M.2 NVMe SSDs Value-Optimised for Mainstream Gamers, DIY System Builders Toshiba Memory Europe GmbH announced the launch of the RC100 Series at International CES 2018, a new line of NVMe [1] (NVM Express) [1] M.2 solid state drives (SSDs) for ...
    Memory » Toshiba » RC100
  5. New “Premium” Client Series Offers 2TBs of Capacity and Optimized Performance for Workstation, Enthusiast and High-End PC/Notebook Applications Toshiba Memory Europe has expanded its widely-acclaimed XG5 lineup of NVMe solid state ...
  6. Toshiba Memory Europe has started sampling Universal Flash Storage (UFS) devices [1] utilising Toshiba Memory Corporation's cutting-edge 64-layer, BiCS FLASH™ 3D flash memory [2] . The new UFS devices meet performance demands for ...
  7. VLSI Solution announces availability of VS23S040, a versatile SPI SRAM device with the largest capacity on the market. VLSI Solution's VS23S040 is an easy to use four megabit static RAM device. The memory can be accessed via a standard SPI ...
    Memory » VLSI Solution » VS23S040
  8. Setting a new threshold for mobile storage to handle ever-increasing amounts of multimedia content Samsung Electronics announced that it has begun mass production of the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage ...
  9. High-speed 40 MHz operation and wide voltage range from 1.8 to 3.6 V improve reliability in IoT equipment LAPIS Semiconductor has recently announced the development of 1 Mbit ferroelectric random access memory (FeRAM) designed for applications such ...
    Memory » LAPIS Semiconductor » MR44V100A, MR45V100A
  10. Everspin Technologies has begun sampling its new 1-Gigabit Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) with lead customers. This breakthrough product delivers a high-endurance, persistent memory with a DDR4- compatible interface. ...
    Memory » Everspin » EMD4E001G
← prev.   next →
 1    2    3    4    5    6    7    8    9 

Slices ↓
Radiolocman facebook Radiolocman twitter Radiolocman google plus