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  1. New M.2 NVMe SSDs Value-Optimised for Mainstream Gamers, DIY System Builders Toshiba Memory Europe GmbH announced the launch of the RC100 Series at International CES 2018, a new line of NVMe [1] (NVM Express) [1] M.2 solid state drives (SSDs) for ...
    Memory » Toshiba » RC100
    22-01-2018
  2. New “Premium” Client Series Offers 2TBs of Capacity and Optimized Performance for Workstation, Enthusiast and High-End PC/Notebook Applications Toshiba Memory Europe has expanded its widely-acclaimed XG5 lineup of NVMe solid state ...
    18-01-2018
  3. Toshiba Memory Europe has started sampling Universal Flash Storage (UFS) devices [1] utilising Toshiba Memory Corporation's cutting-edge 64-layer, BiCS FLASH™ 3D flash memory [2] . The new UFS devices meet performance demands for ...
    16-01-2018
  4. VLSI Solution announces availability of VS23S040, a versatile SPI SRAM device with the largest capacity on the market. VLSI Solution's VS23S040 is an easy to use four megabit static RAM device. The memory can be accessed via a standard SPI ...
    Memory » VLSI Solution » VS23S040
    09-01-2018
  5. Setting a new threshold for mobile storage to handle ever-increasing amounts of multimedia content Samsung Electronics announced that it has begun mass production of the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage ...
    09-01-2018
  6. High-speed 40 MHz operation and wide voltage range from 1.8 to 3.6 V improve reliability in IoT equipment LAPIS Semiconductor has recently announced the development of 1 Mbit ferroelectric random access memory (FeRAM) designed for applications such ...
    Memory » LAPIS Semiconductor » MR44V100A, MR45V100A
    14-12-2017
  7. Everspin Technologies has begun sampling its new 1-Gigabit Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) with lead customers. This breakthrough product delivers a high-endurance, persistent memory with a DDR4- compatible interface. ...
    Memory » Everspin » EMD4E001G
    17-08-2017
  8. The I 2 C EERAM Memory is a Low-Cost NVSRAM that Eliminates the Need for an External Battery to Retain Data A new low-cost, low-risk memory solution offering unlimited endurance and safe data storage at power loss is now available from Microchip ...
    Memory » Microchip » 47L04, 47C04, 47L16, 47C16
    27-10-2016
  9. Provides the Industry’s First Self-refresh DRAM Device with the 12-Pin HyperBus™ Interface; Serves as Expanded Scratchpad Memory for High-Performance Applications Cypress Semiconductor announced sampling of a new high-speed, ...
    Memory » Cypress » S27KL0641, S27KS0641
    13-09-2016
  10. New generation Toshiba BiCS FLASH adds layers, boosts capacity Toshiba Corporation unveiled the latest generation of its BiCS FLASH three-dimensional (3D) flash memory with a stacked cell structure, a 64-layer device that will be first in the world ...
    09-08-2016
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