News: Memory

1. Toshiba Memory Europe Announces UFS 2.1-Compliant Embedded NAND Flash for Automotive Applications
   Extended temperature memory products address data storage demands of increasingly complex applications including infotainment and ADAS Toshiba Memory Europe GmbH has begun sample shipments of embedded NAND flash memory products for automotive ...
   Memory · Automotive » THGAF9G7L1LBAB7, THGAF9G8L2LBAB7, THGAF9G9L4LBAB8, THGAF9T0L8LBAB8, THGAF9T1LBLBABY
   29-01-2018
2. Toshiba Unveils Mainstream RC100 NVMe SSD Series at CES 2018
   New M.2 NVMe SSDs Value-Optimised for Mainstream Gamers, DIY System Builders Toshiba Memory Europe GmbH announced the launch of the RC100 Series at International CES 2018, a new line of NVMe [1] (NVM Express) [1] M.2 solid state drives (SSDs) for ...
   Memory » Toshiba » RC100
   22-01-2018
3. Toshiba Increases Performance, Doubles Capacity with New XG5-P NVMe SSDs
   New “Premium” Client Series Offers 2TBs of Capacity and Optimized Performance for Workstation, Enthusiast and High-End PC/Notebook Applications Toshiba Memory Europe has expanded its widely-acclaimed XG5 lineup of NVMe solid state ...
   Memory · Computers and Peripherals » Toshiba » XG5-P
   18-01-2018
4. Toshiba Memory Europe Unveils UFS Devices Utilizing 64-Layer, 3D Flash Memory
   Toshiba Memory Europe has started sampling Universal Flash Storage (UFS) devices [1] utilising Toshiba Memory Corporation's cutting-edge 64-layer, BiCS FLASH™ 3D flash memory [2] . The new UFS devices meet performance demands for ...
   Memory
   16-01-2018
5. VLSI Solution announces availability of a versatile SPI SRAM device VS23S040
   VLSI Solution announces availability of VS23S040, a versatile SPI SRAM device with the largest capacity on the market. VLSI Solution's VS23S040 is an easy to use four megabit static RAM device. The memory can be accessed via a standard SPI ...
   Memory » VLSI Solution » VS23S040
   09-01-2018
6. Samsung Starts Producing First 512-Gigabyte Universal Flash Storage for Next-Generation Mobile Devices
   Setting a new threshold for mobile storage to handle ever-increasing amounts of multimedia content Samsung Electronics announced that it has begun mass production of the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage ...
   Memory » Samsung
   09-01-2018
7. 1Mb FeRAM Enables Fast Data Backup in Unstable Power Environments
   High-speed 40 MHz operation and wide voltage range from 1.8 to 3.6 V improve reliability in IoT equipment LAPIS Semiconductor has recently announced the development of 1 Mbit ferroelectric random access memory (FeRAM) designed for applications such ...
   Memory » LAPIS Semiconductor » MR44V100A, MR45V100A
   14-12-2017
8. Everspin Announces Sampling of the World's First 1-Gigabit MRAM Product
   Everspin Technologies has begun sampling its new 1-Gigabit Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) with lead customers. This breakthrough product delivers a high-endurance, persistent memory with a DDR4- compatible interface. ...
   Memory » Everspin » EMD4E001G
   17-08-2017
9. New Memory Offering from Microchip Offers Unlimited Endurance Along with Safe Data Storage at Power Loss
   The I 2 C EERAM Memory is a Low-Cost NVSRAM that Eliminates the Need for an External Battery to Retain Data A new low-cost, low-risk memory solution offering unlimited endurance and safe data storage at power loss is now available from Microchip ...
   Memory » Microchip » 47L04, 47C04, 47L16, 47C16
   27-10-2016
10. Cypress Simplifies Embedded System Design with New Low-Pin-Count HyperRAM Memory
    Provides the Industry’s First Self-refresh DRAM Device with the 12-Pin HyperBus™ Interface; Serves as Expanded Scratchpad Memory for High-Performance Applications Cypress Semiconductor announced sampling of a new high-speed, ...
    Memory » Cypress » S27KL0641, S27KS0641
    13-09-2016