Mitsubishi Electric to Launch Silicon-carbide Schottky-barrier Diode
Mitsubishi » BD20060S, BD20060T
Reduces power loss and physical size of power supply systems
Mitsubishi Electric Corporation announced its launch of a silicon-carbide Schottky-barrier diode (SiC-SBD) that incorporates a junction-barrier Schottky (JBS) structure to reduce the power loss and physical size of power supply systems for air conditioners, photovoltaic power systems and more, effective immediately.
1) Silicon carbide contributes to lower power consumption and compact size
2) Improved reliability thanks to junction-barrier Schottky (JBS) structure
Mitsubishi Electric, since first commercializing a power module incorporating SiC devices in 2010, has continued to contribute to the miniaturization and increasing energy efficiency of inverter systems. In line with growing demands for energy-efficient power supply systems for air conditioners, photovoltaic power systems and others, consumers are increasingly choosing products that incorporate SiC-SBDs.
The products are compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment (RoHS) directive 2011/65/EU.
Note: Development of these products has been partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO).
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