Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest RDS(ON) SiC MOSFET at 1200 V in a discrete package. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. Using the separate Kelvin source pin can further reduce switching losses by as much as 30% compared to the traditional 3-lead TO-247 package. Featuring the lowest available on-resistance combined with a low gate charge, the C3M0016120K is ideally suited for three-phase, bridgeless PFC topologies as well as inverter and charger applications.
Features
- Industry-leading 16 mΩ RDS(ON)
- 1200 V VBR (minimum) across entire operating temperature range [-40 °C – 175 °C]
- +15 V gate drive voltage
- Low-impedance package with Kelvin source pin
- > 8mm of creepage/clearance between drain and source
- High-speed switching with low output capacitance
- Fast intrinsic diode with low reverse recovery (QRR)
- Easy to parallel and simple to drive
Target Applications
- Solar and Energy Storage Systems
- Electric Vehicle Charging
- Uninterruptible Power Supply (UPS)
- Motor Control and Drives
- Switched-mode Power Supplies (SMPS)
