Successful Design of High-side GaNPower IC


GaNPower International is pleased to announce the release of two new GaNPower IC (GPI8HINOIC and GPI8HIRGIC) that were specially designed for high-side power switches in a half-bridge application. Using edge-triggered narrow pulses as input signal, these two IC enables the use of small and inexpensive transformer for isolation and level shifting for the high side switch.


Such GaNPower IC eliminate the major cost of using commercially available half-bridge driver. Using proprietary IC design, the GPI8HIRGIC contains an all-GaN regulator circuit that allows for wider range of auxiliary DC power supply (Vcc) from 6-15 V. We are offering limited engineering samples to selected customers at this time.

The GPI8HIRGIC Internal Schematic   The GPI8HIRGIC Waveforms
The GPI8HIRGIC Internal Schematic.   The GPI8HIRGIC Waveforms.

Basic Parameters

Drain-Source breakdown voltage 650 V 650 V
Static drain-source on resistance, TC = 25°C 170 mΩ 175 mΩ
Drain current 7.5 A 7.5 A

JLCPCP: 2USD 2Layer 5PCBs, 5USD 4Layer 5PCBs

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