IXYS, a division of Littelfuse, has begun mass production of the IX4351NE IC, designed to drive SiC MOSFETs and high power IGBTs. Separate 9 A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.
Desaturation detection circuitry detects an over current condition of the SiC MOSFET and initiates a soft turn off, thus preventing a potentially damaging dV/dt event. The logic input, IN, is TTL and CMOS compatible; this input does not need to be level shifted even with a negative gate drive bias voltage. Protection features include UVLO and thermal shutdown detection. An open drain FAULT output signals a fault condition to the microcontroller.
The IX4351NE is rated for an operational temperature range of –40 °C to +125 °C, and is available in a thermally enhanced 16-pin power SOIC package.
Features
- Separate 9 A peak source and sink outputs
- Operating Voltage Range: –10 V to +25 V
- Internal charge pump regulator for selectable negative gate drive bias
- Desaturation detection with soft shutdown sink driver
- TTL and CMOS compatible input
- Under Voltage lockout (UVLO)
- Thermal shutdown
- Open drain FAULT output
Applications
- Driving SiC MOSFETs and IGBTs
- On-board charger and DC charging station
- Industrial inverters
- PFC, AC/DC and DC/DC converters
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| IX4351 Evaluation Board. |
