This component arrangement creates a discrete sample- and-hold system
| Authors | Christophe Basso |
| Main Document | Article «Transistors tame perfidious leakage inductance» |
| Description | Figure 3 |
| File Format / Size | PDF / 15 Kb |
| Document Language | English |
Other Materials from the Main Document
- Article «Transistors tame perfidious leakage inductance»
- Figure 3. This component arrangement creates a discrete sample- and-hold system
- Figure 5. Thanks to the circuit in Figure 3, the auxiliary winding better tracks the primary winding
- N-Channel Power MOSFETs, 11 A, 60-100 V. Datasheet IRF
