NXP Expands Transistor Portfolio in Ultra-Small DFN1006 Package

NXP

Industry’s broadest portfolio in space-saving 1-mm x 0.6-mm package includes 60 bipolar transistors and 12 small-signal MOSFETs, available immediately

NXP Semiconductors announced the expansion of its transistor portfolio in the ultra-small discrete flat no-leads package DFN1006B-3 (SOT883B). NXP now offers 60 bipolar transistors (BJT) and 12 small-signal single N- and P-channel Trench MOSFETs in the 1-mm × 0.6-mm x 0.37-mm DFN plastic SMD package - the industry’s largest portfolio in the smallest transistor package (DFN1006) available today.

NXP - DFN1006

The expanded portfolio includes a wide range of general purpose and switching transistors, such as the industry standard types BC847 and BC857, as well as PMBT3904 and PMBT3906. It also features a broad choice of 42 resistor equipped transistors (RETs), which cover all standard resistor combinations.

In addition, NXP offers highly efficient BJTs and MOSFETs that contribute to lower power consumption and longer battery life for all mobile applications. The low saturation voltage transistor PBSS2515MB can handle peak currents of up to 1 A, while featuring an ultra-low saturation voltage of 150 mV. NXP's 20-60 V MOSFETs such as the PMZB290UN feature extremely low on-resistance down to 250 mΩ, which reduces conduction losses.

These products are ideal for diverse power conversion and switching functionalities in small, thin and battery-driven electronic devices such as smartphones, MP3 players, tablets and eReaders. They are also well suited for non-mobile but similarly space-constrained applications, such as LED TV sets and automotive dashboards.

The new DFN1006B-3 portfolio offers the same high electrical and thermal performance as equivalent devices in much larger packages such as SOT23, SOT323 or SOT416, allowing a 1:1 replacement. This saves valuable space on the PCB, as the 1006 mm (0402 inch) sized leadless package has only one-tenth the footprint and less than half the height of SOT23.

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