Everspin Technologies leads the industry in commercializing the first Spin-Torque Magnetoresistive RAM (ST-MRAM), a new type of ultra-low latency memory, which offers an fast alternative to non-volatile DRAM sub systems.
The 64Mb device is the first product in Everspin's ST-MRAM roadmap that is planned to scale to gigabit density memories with faster speeds. The new memory type has about 500 times the speed of NAND flash but the endurance of DRAM.
The first semiconductor memory that combines the speed and endurance of DRAM with the non-volatility of Flash, ST-MRAM gives designers of high performance storage systems the ability to achieve ultra low latency, increase reliability with high cycling endurance and protect data in the event of power loss. One example of potential use is in the area of cloud storage .Even as more users and content are added, faster and consistent data storage access is a necessity.
Everspin's proprietary Spin-Torque technology uses a spin-polarized current for switching. The EMD3D064M 64Mb ST-MRAM is functionally compatible with the industry standard JEDEC specification for the DDR3 interface, which delivers up to 1600 million transfers per second per I/O, translating to memory bandwidth of up to 3.2 GBytes/second at nanosecond class latency. The product is offered in an industry standard WBGA package aligned with the DDR3 standard.
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ST-MRAM chips are about 50 times more expensive than NAND flash, meaning it's not viable as a mass storage device. However, ST-MRAM pricing per GB is expected to scale from SRAM pricing levels to DRAM pricing levels over the next 5 years.
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Everspin is shipping working samples of the EMD3D064M 64Mb DDR3 ST-MRAM to select customers and will announce details on broad availability in 2013.
