International Rectifier introduced a new generation Insulated Gate Bipolar Transistor (IGBT) technology platform. The Generation 8 (Gen8) 1200V IGBT platform utilizes IR’s latest generation trench gate field stop technology to offer best-in-class performance for industrial and energy saving applications.
The novel Gen8 design allows best-in-class VCE(ON) to reduce power dissipation and increase power density, and delivers superior robustness.
The new technology offers softer turn-off characteristics ideal for motor drive applications, minimizing dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. A narrow distribution of parameters offers excellent current sharing when paralleling multiple IGBTs in high-current power modules. The thin wafer technology delivers improved thermal resistance and maximum junction temperature up to 175°C.
Specifications
|
IR Part Number
|
VCES
|
IC (NOM)
|
VCE(ON)
(typ) |
Package
|
|
1200V
|
10A
|
1.7
|
Die on Film
|
|
|
15A
|
||||
|
25A
|
||||
|
35A
|
||||
|
40A
|
||||
|
50A
|
||||
|
75A
|
||||
|
100A
|
||||
|
150A
|
||||
|
200A
|
Availability
IR’s Gen8 1200V IGBT platform is being sampled to major OEM and ODM partners at this time. Contact your Sales representative for more information.
