Rapid Diodes - The Perfect Partner to CoolMOS and TRENCHSTOP 5

Infineon

Infineon has entered the high-voltage hyperfast silicon diode market with the launch of its new 650V Rapid 1 and Rapid 2 diode families. These new diode families complement Infineon’s existing high-power 600V/650V diode range, closing the gap between SiC diodes and emitter-controlled diodes. The new diodes represent the perfect balance between cost and performance, and are aimed at high-efficiency applications that switch between 18kHz and 100kHz. The new Rapid diodes seamlessly integrate with CoolMOS™ and TRENCHSTOP™ 5 in PFC topologies.

Infineon - Rapid 1, Rapid 2

The Rapid diode families will be available in two versions with 650V break-through voltage, an increase of 50V on previous models. This additional 50V increases reliability without impacting on efficiency. The new diodes are temperature-stable thanks to their low VF, which remains constant at temperatures between -40°C and 175°C. This stability enables customers to get maximum efficiency from the diodes regardless of junction temperature.

The Rapid 1 family features low VF and soft recovery, making it the perfect fit for applications that switch between 18kHz and 40kHz and have strict requirements regarding conduction losses and EMI emissions.

The Rapid 2 family is designed for applications switching between 40kHz and 100kHz. In this range, switching losses are the main source of power dissipation. Rapid 2 devices have therefore been optimized to provide low Qrr and trr. The Rapid 2 family also provides super soft recovery with an S factor >>1.

Rapid 1 with optimized VF:

  • 1.35V temperature-stable forward voltage (VF)
  • Highest S-factor for ultimate softness and low EMI filtering needed
  • Lowest Irrm to provide lowest turn-on losses on the boost switch
  • For applications switching between 18kHz and 40kHz
  • trr < 100ns

Rapid 2 diode family:

  • Lowest reverse recovery charge (Qrr): VF ratio for BiC performance
  • Low reverse recovery time (trr)
  • Lowest Irrm to provide lowest turn-on losses on the boost switch
  • Designed for applications switching between 40kHz and 100kHz
  • trr < 50ns

Features

  • Temperature-stable conduction losses (VF)
  • Rapid 1 reduces conduction losses (VF) offered by best competitor by 250mV
  • Rapid 2 offers lowest Qrr/VF ratio
  • Irrm 10% lower than best competitor
  • High level of softness
  • Rapid 2 offers best-in-class efficiency for hyperfast Si diodes at 70kHz
  • Lowest Irrm improves the Eon of the switch in the PFC by 10%
  • High level of softness provides BiC EMI behavior

Applications

  • Boost diodes in all PFCs that require high levels of efficiency, and boost topologies in photovoltaic inverters. PFCs can be found in:
    • Domestic air conditioning systems
    • Commercial air conditioning systems
    • Welding machines
    • Servers
    • Telecom rectifiers
    • PC power packs (>90W)
    • TV PFC (>90W)
    • Free-wheeling diodes in solar inverters
    • Two-transistor forward topologies (TTF)

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