Vishay Intertechnology introduced a new 30 V asymmetric dual TrenchFET® power MOSFET in the PowerPAIR 3 × 3 mm package utilizing TrenchFET Gen IV technology. Providing 57% lower on-resistance, up to 25% higher power density, and 5% higher efficiency than previous-generation devices in this package size, the Vishay Siliconix SiZ340DT helps to save space and simplify the design of highly efficient synchronous buck converters by combining a high-side and low-side MOSFET in one compact package.
The TrenchFET Gen IV technology of the SiZ340DT utilizes a very high-density design to reduce on-resistance without significantly increasing the gate charge, minimizing conduction losses and reducing total power loss for higher power output. As a result, the low-side Channel 2 MOSFET of the SiZ340DT offers a low on-resistance of 5.1 mΩ at a 10 V gate drive and 7.0 mΩ at 4.5 V. The high-side Channel 1 MOSFET features on-resistance of 9.5 mΩ at 10 V and 13.7 mΩ at 4.5 V.
The device released today is optimized for synchronous buck designs in “cloud computing” infrastructures, servers, telecommunication equipment, and various client-side electronic devices and mobile computing. The intended DC / DC blocks include system auxiliary power rails in servers, computers, notebook computers, graphic cards, gaming consoles, storage arrays, telecom equipment, DC / DC bricks, and POL. The SiZ340DT can also be used in DC/DC conversion circuitry that supplies power to FPGAs.
In these applications, the device maintains a low gate charge of 5.6 nC for the Channel 1 MOSFET and 10.1 nC for Channel 2. The resulting low on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs in DC / DC converter applications — reduces conduction and switching losses to improve total system efficiency. With higher efficiency, the SiZ340DT can run 30% cooler than previous-generation devices at the same output load, or provide increased power density.
For typical DC / DC topologies with 10 A to 15 A output current and an output voltage below 2 V, the compact 3 × 3 mm footprint area of the SiZ340DT saves up to 77% PCB space compared to using discrete solutions, such as a PowerPAK® 1212-8 MOSFET for the high-side and a PowerPAK SO-8 for the low side. Reducing switching losses, the device allows higher switching frequencies beyond 450 kHz to shrink the PCB size, without sacrificing efficiency, by enabling smaller inductors and capacitors. In addition, by providing higher performance than multiple paralleled previous-generation devices, the MOSFET can potentially reduce the overall component count and simplify designs.
Device Specification Table:
| Channel | 1 | 2 | |
|---|---|---|---|
| VDS (V) | 30 | 30 | |
| VGS (V) | 20 | 20 | |
| RDS(ON) max. (m Ω) |
10 V | 9.5 | 5.1 |
| 4.5 V | 13.7 | 7.0 | |
| Qg (Typ.) 4.5 V (nC) | 5.6 | 10.1 | |
| ID (A) | TA = 25 °C | 15.6 | 22.6 |
| TA = 70 °C | 12.4 | 18.1 | |
