AAT003-10E Provides Large Signal and Low Impedance Without Amplification
NVE Corporation announced the introduction of the AAT003-10E Tunneling Magnetoresistance (TMR) Angle Sensor, a high-output magnetic sensor element for position measurements when a rotating magnetic field is applied.
The new part has the same best-in-class accuracy as the groundbreaking AT001-10E, but with lower bridge resistance for a low-noise interface to signal-processing circuitry while still maintaining low power operation.
Also known as Spin-Dependent Tunneling (SDT), Magnetic Tunnel Junction (MTJ), or Tunneling Magnetic Junction (TMJ), Tunneling Magnetoresistance is a spintronic quantum effect that produces a dramatic resistance change in a normally insulating layer, depending on the magnetic field and thus the predominant electron spin in a free layer. The device has four TMR elements configured as an angle sensor with full quadrature sine and cosine outputs.
Key AAT003 features include:
- 0.5 degrees maximum angular measurement error
- Large output signal without amplification
- 40 kilohms nominal bridge resistance
- Wide airgap tolerance
- Sine and cosine outputs for direction detection
- Ultraminiature 2.5 × 2.5 × 0.8 mm TDFN6
AAT-Series Sensor outputs are proportional to the supply voltage and peak-to-peak output voltages are much larger than other sensor technologies. Typical applications include rotary encoders and motor shaft position sensors.
The other member of the AAT Angle Sensor family, the AAT001, has 1.25 megohm nominal bridge resistance for microwatt power consumption and is ideal for battery applications.
Available now, AAT003-10E Angle Sensors are priced at $1.94 each in 1,000-piece quantities.
