NXP introduces new FlatPower, low leakage Schottky barrier rectifiers in SOD123W

NXP PMEG6010ELR PMEG6020ELR

NXP introduces the first two 60 V low leakage Schottky barrier rectifiers in the FlatPower SOD123W package. PMEG6010ELR and PMEG6020ELR offer a reverse voltage of 60 V and average forward currents of 1 A and 2 A. They also offer a low reverse current of 1 µA at 60 V and low forward voltage drops of 660 mV and 760 mV. Capable of temperatures up to 175°C and AEC-Q101 qualified, these Schottky barrier rectifiers offer a reduced leakage current, even at high temperatures. This makes them ideal for automotive applications such as airbags, ABS and engine control systems.

NXP PMEG6010ELR

Thanks to clip bond technology the FlatPower SOD123W package offers higher power capabilities on a small footprint of only 2.6 × 1.7 mm. Together with a height of only 1 mm, the small package size makes these devices especially suitable for designs where high performance in limited space is needed.

NXP PMEG6010ELR

These diodes are the first in a series of Schottky rectifiers in FlatPower packages SOD123W and SOD128. 

Key features and benefits

  • Reverse voltage VR ≤ 60 V
  • Average forward current IF(AV) ≤ 1 and 2 A
  • Low reverse current IR ≤ 1 µA at 60 V
  • Low forward voltage VF ≤ 660 mV at 1 A and 750 mV at 2 A
  • AEC-Q101 qualified
  • High temperature applications up to 175°C

Key Applications

  • Polarity protection
  • Automotive application
  • SMPS / DC-to-DC converters
  • High temperature application
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