Vishay Intertechnology Announces its First 500 V High-Voltage MOSFETs Built on E Series Super Junction Technology

Vishay SiHG25N50E SiHP25N50E SiHA25N50E

Vishay Intertechnology announced the first MOSFETs in a new 500 V family that features the same benefits of low conduction and switching losses as the company's 600 V and 650 V E Series devices. The low on-resistance and gate charge of the new devices will play a key role in saving energy in high-power, high-performance consumer products, lighting applications, and ATX / silver box PC switch mode power supplies (SMPS).

Vishay Intertechnology - SiHx25N50E

Built on second-generation Super Junction Technology, the new Vishay Siliconix SiHx25N50E 500 V MOSFETs provide a high-efficiency complement to Vishay's existing 500 V D Series components based on high-performance planar technology. The 25 A devices feature low on-resistance of 145 mΩ in a variety of package options, including the TO-220, TO-247AC, and the thin leaded TO-220 FULLPAK, which offers a low profile optimized for slim consumer products.

The new MOSFETs provide ultra-low gate charge of 57 nC, and low gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications. Like Vishay's 600 V and 650 V E Series devices, the low on-resistance and optimized switching speed of the 500 V technology can increase efficiency and power density in power factor correction (PFC), two-switch forward converter, and flyback converter applications.

The RoHS-compliant devices are designed to withstand high energy pulses in the avalanche and commutation modes with guaranteed limits through 100 % UIS testing.

Device Specification Table:

Device
ID
@ 25 °C
RDS(ON)
@ 10 V
(max.)
QG
@ 10 V
(typ.)
Package
25 A
145 mΩ
57 nQ
TO-247AC
25 A
145 mΩ
57 nQ
TO-220
25 A
145 mΩ
57 nQ
 TO-220 FULLPAK

 vishay.com

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