New low RDSon small-signal MOSFETs for automotive

NXP DFN2020MD-6

NXP have just released 10 low RDSon small-signal MOSFETs qualified for automotive solutions in DFN2020MD-6, SOT23 and SOT457 packages. Based on Trench technology, the new products offer VDS voltage of 20 – 80 V, ESD protection of up to 4 kV HBM and a drain-source-on-state resistance down to 27 mOhm.

Additionally, three types housed in DFN2020MD-6 offer the unique feature of 100% tin-plated solderable sidepads for optical solder inspection, and an exposed drain pad for excellent thermal conduction.

NXP DFN2020MD-6

All products are automotive qualified and suitable for energy efficiency designs in applications as relay and high-speed line drivers, low-side and high-side load switches and switching circuits.

Datasheet download

Features and benefits

  • Low RDSon down to 27 mOHm
  • Trench MOSFET technology
  • Up to 4 kV ESD protection according to HBM
  • AEC-Q101 qualified

Key applications

  • Relay drivers
  • High-speed line drivers
  • Low-side and low-side load switches
  • Switching circuits

nxp.com

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