NXP released 600 V transistors in SOT223

NXP just released three new high voltage transistors, the 600 V PBHV8560Z (NPN), PBHV3160Z and PBHV9560Z (PNP) in the SMD plastic package SOT223.

These new types offer high collector current gain h_FE at high IC and a saturation voltage down to 50 mV. All products are AEC-Q101 qualified and ideal for a wide variety of applications including power management, lighting and automotive power modules (e.g. for hybrid / electric vehicles). As the global leader for small-signal discretes, we are the first to offer an NPN version of the 600 V low VCEsat transistor, thus providing you with a complete portfolio of these products.

Download datasheets

• PBHV8560Z (NPN) in SOT223
• PBHV3160Z (PNP) in SOT223
• PBHV9560Z (PNP) in SOT223

Features and benefits

• Low collector-emitter saturation voltage VCEsat
• High collector current capability up to 0.5 A
• High collector current gain hFE at high IC
• AEC-Q101 qualified

Applications

• Lighting applications (consumer and automotive)
• Power management
• Automotive power modules